BGA711N7E6327XTSA1

BGA711N7E6327XTSA1
Mfr. #:
BGA711N7E6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA
Lifecycle:
New from this manufacturer.
Datasheet:
BGA711N7E6327XTSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
TSNP-7
Type:
RF Silicon Germanium
Technology:
SiGe
Operating Frequency:
2.1 MHz
Minimum Operating Temperature:
- 30 C
Maximum Operating Temperature:
+ 85 C
Series:
BGA711N7
Packaging:
Reel
Brand:
Infineon Technologies
Product Type:
RF Amplifier
Factory Pack Quantity:
7500
Subcategory:
Wireless & RF Integrated Circuits
Part # Aliases:
711N7 BGA E6327 SP001061040
Tags
BGA711N, BGA711, BGA71, BGA7, BGA
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
RF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA
***ineon SCT
The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X, TSNP-7-1, RoHS
***ineon
The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineons proprietary and cost-effective SiGe:C technology and comes in low profile TSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 2100 MHz path can be easily converted into a 1900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. | Summary of Features: Gain: 17 / -8 dB in high / low gain mode; Noise figure: 1.1 dB in high gain mode; Supply current: 3.6 / 0.5 mA in high / low gain mode; Standby mode (< 2 A typ.); Output internally matched to 50 ; Inputs pre-matched to 50 ; 2 kV HBM ESD protection; Low external component count; Small leadless TSNP-7-1 / TSNP-7-2 packages (2.0 x 1.3 x 0.39 mm); Pb-free (RoHS compliant) package | Target Applications: LNA for LTE and 3G systems
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*** Semiconductors SCT
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***nell
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***S
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Part # Mfg. Description Stock Price
BGA711N7E6327XTSA1
DISTI # BGA711N7E6327XTSA1-ND
Infineon Technologies AGIC RF AMP 1.8GHZ-2.7GHZ TSNP7-1
RoHS: Compliant
Min Qty: 7500
Container: Tape & Reel (TR)
Limited Supply - Call
    BGA711N7E6327XTSA1
    DISTI # 726-BGA711N7E6327XTS
    Infineon Technologies AGRF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA
    RoHS: Compliant
    0
      BGA711N7E6327XTSA1Infineon Technologies AGTelecom Circuit, 1-Func, Bipolar, PDSO6
      RoHS: Compliant
      52500
      • 1000:$0.4200
      • 500:$0.4400
      • 100:$0.4600
      • 25:$0.4800
      • 1:$0.5200
      Image Part # Description
      BGA711N7E6327XTSA1

      Mfr.#: BGA711N7E6327XTSA1

      OMO.#: OMO-BGA711N7E6327XTSA1

      RF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA
      BGA711N7E6327XTSA1

      Mfr.#: BGA711N7E6327XTSA1

      OMO.#: OMO-BGA711N7E6327XTSA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors 3G/3.5G/4GSingleBand SiGe Bipolar LNA
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of BGA711N7E6327XTSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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