HN2A01FU-Y(TE85L,F

Mfr. #:: HN2A01FU-Y(TE85L,F
Manufacturer:: Toshiba
Description:: Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
Lifecycle:: New from this manufacturer.
Datasheet:: HN2A01FU-Y(TE85L,F Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: HN2A01FU-Y(TE85L,F Datasheet
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: US-6

Transistor Polarity:: PNP

Configuration:: Dual

Collector- Emitter Voltage VCEO Max:: 50 V

Collector- Base Voltage VCBO:: 50 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 0.1 V

Maximum DC Collector Current:: 150 mA

Gain Bandwidth Product fT:: 80 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 125 C

Series:: HN2A01

DC Current Gain hFE Max:: 400

Packaging:: Reel

Brand:: Toshiba

DC Collector/Base Gain hfe Min:: 120

Pd - Power Dissipation:: 200 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Tags: HN2A01FU-Y(T, HN2A01FU-Y, HN2A01FU, HN2A01F, HN2A0, HN2A, HN2

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HN2A01FU-Y(TE85L,F Description

***i-Key: TRANS 2PNP 50V 0.15A US6

*** Source Electronics: Trans GP BJT NPN/PNP 50V 0.15A 150mW 6-Pin UMT T/R / TRANS NPN/PNP 50V 0.15A 6UMT

***(Formerly Allied Electronics): ROHM UMZ1NTR Dual NPN+PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMZ1NTR

***ure Electronics: UMZ1N Series 50 V 150 mA SMT NPN/PNP General Purpose Dual Transistor - SC-88

***ment14 APAC: Transistor DUAL UM6 PNP/NPN; Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz

***(Formerly Allied Electronics): ROHM UMT2NTR Dual PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMT2NTR

***ure Electronics: UMT2N Series 50 V 150 mA SMT Dual PNP General purpose Transistor-SC-88

***ment14 APAC: TRANSISTOR DUAL UM6 PNP/PNP; Module Configuration:Dual; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:150mW; DC Collector Current:-150mA; DC Current Gain hFE:120; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-500mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:140MHz; Hfe Min:120; Package / Case:SOT-363; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

***ark: Bipolar Array, Dual Pnp, 65V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC856AS-7

*** Source Electronics: Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363

***ure Electronics: BC856AS Series 65 V 100 mA Dual PNP SMT Small Signal Transistor - SOT-363

***ark: Transistor, Npn/Pnp, 50V, 0.1A, Sot363 Rohs Compliant: Yes |Diodes Inc. DCX114EU-7-F

***nsix Microsemi: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: DCX114EU Series 50 V 100 mA NPN/PNP Surface Mount Dual Transistor - SOT-363-6

***ical: Trans Digital BJT NPN/PNP 50V 100mA 200mW 6-Pin SOT-363 T/R

***ment14 APAC: Transistor, NPN/PNP, 50V, 0.1A, SOT363;

***(Formerly Allied Electronics): PNP Biased Signal Dual Transistor SOT363 | Diodes Inc DDA114YU-7-F

***ical: Trans Digital BJT PNP 50V 100mA 200mW 6-Pin SOT-363 T/R

***ment14 APAC: RF Transistor, 50V, 0.1A, SOT-363;

***des Inc SCT: Dual PNP, 50V, 0.1A, SOT363, 200mW

***ronik: PNP DIGI.-TR.10K/47K 50V SOT363

***ark: Prebias Transistor Sot363 T&r 3K

***S: French Electronic Distributor since 1988

***i-Key: TRANS 2PNP PREBIAS 0.2W SOT363

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ponent Stockers USA: 100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

***Yang: BJT,NPN/PNP,dual,65V,100mA,TSSOP6, RL

***ment14 APAC: TRANSISTOR, NPN, 65V, 100MA, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (19-Dec-2012)

Market price

Part #	Mfg.	Description	Stock	Price
HN2A01FU-Y(TE85L,F DISTI # HN2A01FU-Y(TE85LFTR-ND	Toshiba America Electronic Components	TRANS 2PNP 50V 0.15A US6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.0507
HN2A01FU-Y(TE85L,F DISTI # HN2A01FU-Y(TE85LFCT-ND	Toshiba America Electronic Components	TRANS 2PNP 50V 0.15A US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2851In Stock	1000:$0.0579 500:$0.0852 250:$0.0999 100:$0.1590 25:$0.2044 10:$0.2840 1:$0.3100
HN2A01FU-Y(TE85L,F DISTI # HN2A01FU-Y(TE85LFDKR-ND	Toshiba America Electronic Components	TRANS 2PNP 50V 0.15A US6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
HN2A01FU-Y(TE85L,F DISTI # 757-HN2A01FU-YTE85LF	Toshiba America Electronic Components	Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A RoHS: Compliant	2759	1:$0.5500 10:$0.3030 100:$0.1300 1000:$0.1000 3000:$0.0760 9000:$0.0680 24000:$0.0630 45000:$0.0560 99000:$0.0540

Image	Part #	Description
	Mfr.#: HN2A01FU-GR(TE85LF OMO.#: OMO-HN2A01FU-GR-TE85LF	Bipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
	Mfr.#: HN2A01FU-Y(TE85L,F OMO.#: OMO-HN2A01FU-Y-TE85L-F	Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
	Mfr.#: HN2A01FU-GR(TE85LF OMO.#: OMO-HN2A01FU-GR-TE85LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
	Mfr.#: HN2A01FU-GR(TE85LFCT-ND OMO.#: OMO-HN2A01FU-GR-TE85LFCT-ND-1190	New and Original
	Mfr.#: HN2A01FU-GR(TE85LFDKR-ND OMO.#: OMO-HN2A01FU-GR-TE85LFDKR-ND-1190	New and Original
	Mfr.#: HN2A01FU-Y(TE85LFDKR-ND OMO.#: OMO-HN2A01FU-Y-TE85LFDKR-ND-1190	New and Original
	Mfr.#: HN2A01FU-GR OMO.#: OMO-HN2A01FU-GR-1190	150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
	Mfr.#: HN2A01FU-GR(TE85L) OMO.#: OMO-HN2A01FU-GR-TE85L--1190	New and Original
	Mfr.#: HN2A01FU-Y OMO.#: OMO-HN2A01FU-Y-1190	New and Original
	Mfr.#: HN2A01FU-Y(TE85L OMO.#: OMO-HN2A01FU-Y-TE85L-1190	New and Original

HN2A01FU-Y(TE85L,F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes