IPDD60R050G7XTMA1

Mfr. #:: IPDD60R050G7XTMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPDD60R050G7XTMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPDD60R050G7XTMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-HDSOP-10

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 47 A

Rds On - Drain-Source Resistance:: 50 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 68 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 278 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Brand:: Infineon Technologies

Fall Time:: 3 ns

Product Type:: MOSFET

Rise Time:: 6 ns

Factory Pack Quantity:: 1700

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 72 ns

Typical Turn-On Delay Time:: 22 ns

Part # Aliases:: IPDD60R050G7 SP001632818

Tags: IPDD60R05, IPDD60R0, IPDD6, IPDD, IPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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IPDD60R050G7XTMA1 Description

***ure Electronics: N-Channel 600 V 50 mOhm 68 nC CoolMOS G7 Power Transistor - HDSOP-10

***ical: Trans MOSFET N-CH 600V 47A 10-Pin HDSOP EP T/R

***et: Trans MOSFET N-CH 650V 47A 10-Pin HDSOP T/R

***i-Key: MOSFET NCH 650V 135A PG-HDSOP-10

***ronik: N-CH 650V 47A 50mOhm HDSOP-10

***ark: Mosfet, N-Ch, 600V, 47A, Hdsop; Transistor Polarity:n Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 47A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:HDSOP; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Gold Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 47A, HDSOP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:47A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.043ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:HDSOP; No. di Pin:10Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Gold Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPDD60R050G7XTMA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ C7 Gold (G7) Power MOSFETs: Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.

Market price

Part #	Mfg.	Description	Stock	Price
IPDD60R050G7XTMA1 DISTI # V72:2272_19084633	Infineon Technologies AG	IPDD60R050G7	1690	1000:$5.1830 500:$5.8040 250:$6.2620 100:$6.6140 25:$7.8430 10:$8.2280 1:$10.0023
IPDD60R050G7XTMA1 DISTI # IPDD60R050G7XTMA1CT-ND	Infineon Technologies AG	MOSFET NCH 650V 135A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1915In Stock	500:$6.4482 100:$7.4050 10:$8.9440 1:$9.9000
IPDD60R050G7XTMA1 DISTI # IPDD60R050G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET NCH 650V 135A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1915In Stock	500:$6.4482 100:$7.4050 10:$8.9440 1:$9.9000
IPDD60R050G7XTMA1 DISTI # IPDD60R050G7XTMA1TR-ND	Infineon Technologies AG	MOSFET NCH 650V 135A PG-HDSOP-10 RoHS: Compliant Min Qty: 1700 Container: Tape & Reel (TR)	1700In Stock	1700:$5.4525
IPDD60R050G7XTMA1 DISTI # 30676471	Infineon Technologies AG	IPDD60R050G7	1700	1700:$4.8178
IPDD60R050G7XTMA1 DISTI # 32683279	Infineon Technologies AG	IPDD60R050G7	1690	2:$10.0023
IPDD60R050G7XTMA1 DISTI # SP001632818	Infineon Technologies AG	Trans MOSFET N-CH 650V 47A 10-Pin HDSOP T/R (Alt: SP001632818) RoHS: Compliant Min Qty: 1700 Container: Tape and Reel	Europe - 1700	17000:€4.1900 10200:€4.4900 6800:€4.8900 3400:€5.0900 1700:€5.2900
IPDD60R050G7XTMA1 DISTI # IPDD60R050G7XTMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 47A 10-Pin HDSOP T/R - Tape and Reel (Alt: IPDD60R050G7XTMA1) RoHS: Compliant Min Qty: 1700 Container: Reel	Americas - 0	17000:$4.7900 10200:$4.8900 6800:$5.0900 3400:$5.2900 1700:$5.4900
IPDD60R050G7XTMA1 DISTI # 59AC7039	Infineon Technologies AG	MOSFET, N-CH, 600V, 47A, HDSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:47A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	102	1000:$5.2400 500:$6.0200 250:$6.6100 100:$6.9100 50:$7.4300 25:$7.9600 10:$8.3500 1:$9.2400
IPDD60R050G7XTMA1 DISTI # 726-IPDD60R050G7XTM1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	1468	1:$9.1500 10:$8.2700 25:$7.8800 100:$6.8400 250:$6.5400 500:$5.9600 1000:$5.1900 1700:$5.0000
IPDD60R050G7XTMA1	Infineon Technologies AG	650V, 135A, 50mOhms, DDPAK Mosfet RoHS: Compliant	15Cut Tape/Mini-Reel	1:$10.3600 50:$6.8300 100:$6.3400 250:$5.7500 500:$5.3400
IPDD60R050G7XTMA1 DISTI # 2888461	Infineon Technologies AG	MOSFET, N-CH, 600V, 47A, HDSOP	92	100:£5.3200 50:£5.7300 10:£6.1300 5:£7.1200 1:£7.6900
IPDD60R050G7XTMA1 DISTI # XSKDRABV0051107	Infineon Technologies AG	RoHS: Compliant	5100 in Stock0 on Order	5100:$6.7400 1700:$7.2200
IPDD60R050G7XTMA1 DISTI # 2888461	Infineon Technologies AG	MOSFET, N-CH, 600V, 47A, HDSOP RoHS: Compliant	102	500:$9.7200 100:$11.1600 10:$13.4800 1:$14.9200

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IPDD60R050G7XTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$9.15~~; ~~$9.15~~

10: ~~$8.27~~; ~~$82.70~~

25: ~~$7.88~~; ~~$197.00~~

100: ~~$6.84~~; ~~$684.00~~

250: ~~$6.54~~; ~~$1 635.00~~

500: ~~$5.96~~; ~~$2 980.00~~

1000: ~~$5.19~~; ~~$5 190.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPDD60R050G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes