 | | |
| PartNumber | IPDD60R050G7XTMA1 | IPDD60R080G7XTMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-HDSOP-10 | PG-HDSOP-10 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 47 A | 29 A |
| Rds On Drain Source Resistance | 50 mOhms | 80 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 68 nC | 42 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 278 W | 174 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 3 ns | 3.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6 ns | 5 ns |
| Factory Pack Quantity | 1700 | 1700 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 72 ns | 61 ns |
| Typical Turn On Delay Time | 22 ns | 19 ns |
| Part # Aliases | IPDD60R050G7 SP001632818 | IPDD60R080G7 SP001632824 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPDD60R050G7XTMA1 | MOSFET HIGH POWER_NEW | |
| IPDD60R080G7XTMA1 | MOSFET HIGH POWER_NEW | ||
| IPDD60R080G7XTMA1 | MOSFET NCH 650V 83A PG-HDSOP-10 | ||
| IPDD60R050G7XTMA1 | MOSFET NCH 650V 135A PG-HDSOP-10 | ||
| IPDD60R050G7XTMA1-CUT TAPE | New and Original | ||
| IPDD60R080G7XTMA1-CUT TAPE | New and Original | ||
| IPDD60R050G7 | Transistor MOSFET N-CH 600V 47A 10-Pin HDSOP T/R (Alt: IPDD60R050G7) |