IPD079N06L3GBTMA1

IPD079N06L3GBTMA1
Mfr. #:
IPD079N06L3GBTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPD079N06L3GBTMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD079N06L3GBTMA1 DatasheetIPD079N06L3GBTMA1 Datasheet (P4-P6)IPD079N06L3GBTMA1 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
6.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
29 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
79 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
36 S
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
26 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
37 ns
Typical Turn-On Delay Time:
15 ns
Part # Aliases:
G IPD079N06L3 IPD79N6L3GXT SP000453626
Unit Weight:
0.139332 oz
Tags
IPD079N06L3G, IPD079, IPD07, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V
***ure Electronics
Single N-Channel 60 V 7.9 mOhm 22 nC OptiMOS™ Power Mosfet - DPAK
***p One Stop Japan
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
***ical
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R
***an P&S
60V,7.9mΩ,50A,N-Channel Power MOSFET
***o-Tech
MOSFET N-Ch 60V 50A OptiMOS3 TO252
***i-Key
MOSFET N-CH 60V 50A TO252-3
***ronik
N-CH 60V 50A 7,9mOhm TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:79W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 60V, 50A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0063ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:79W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Part # Mfg. Description Stock Price
IPD079N06L3GBTMA1
DISTI # V72:2272_06384373
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1501
  • 1000:$0.3161
  • 500:$0.3512
  • 250:$0.3902
  • 100:$0.4920
  • 25:$0.5467
  • 10:$0.6074
  • 1:$0.6749
IPD079N06L3GBTMA1
DISTI # V36:1790_06384373
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD079N06L3GBTMA1
    DISTI # IPD079N06L3GBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 50A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    16544In Stock
    • 1000:$0.4886
    • 500:$0.6189
    • 100:$0.7981
    • 10:$1.0100
    • 1:$1.1400
    IPD079N06L3GBTMA1
    DISTI # IPD079N06L3GBTMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 60V 50A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    16544In Stock
    • 1000:$0.4886
    • 500:$0.6189
    • 100:$0.7981
    • 10:$1.0100
    • 1:$1.1400
    IPD079N06L3GBTMA1
    DISTI # IPD079N06L3GBTMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 60V 50A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    15000In Stock
    • 2500:$0.4427
    IPD079N06L3GBTMA1
    DISTI # 31699392
    Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    100000
    • 2500:$0.3734
    IPD079N06L3GBTMA1
    DISTI # 32864341
    Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    2500
    • 2500:$0.5517
    IPD079N06L3GBTMA1
    DISTI # 30679643
    Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    1501
    • 1000:$0.3398
    • 500:$0.3775
    • 250:$0.4195
    • 100:$0.5289
    • 25:$0.5877
    • 20:$0.6530
    IPD079N06L3GBTMA1
    DISTI # IPD079N06L3GBTMA1
    Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD079N06L3GBTMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.3309
    • 5000:$0.3189
    • 10000:$0.3069
    • 15000:$0.2969
    • 25000:$0.2919
    IPD079N06L3GBTMA1
    DISTI # 79X1435
    Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 79X1435)
    RoHS: Compliant
    Min Qty: 5
    Container: Ammo Pack
    Americas - 0
      IPD079N06L3GBTMA1
      DISTI # 79X1435
      Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes5
      • 1:$0.4190
      • 10:$0.4190
      • 25:$0.4190
      • 50:$0.4190
      • 100:$0.4190
      • 250:$0.4190
      • 500:$0.4190
      • 1000:$0.4190
      IPD079N06L3GBTMA1Infineon Technologies AGSingle N-Channel 60 V 7.9 mOhm 22 nC OptiMOS Power Mosfet - DPAK
      RoHS: Not Compliant
      2500Reel
      • 2500:$0.3150
      IPD079N06L3GBTMA1
      DISTI # 726-IPD079N06L3GBTMA
      Infineon Technologies AGMOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
      RoHS: Compliant
      2553
      • 1:$0.9400
      • 10:$0.8050
      • 100:$0.6190
      • 500:$0.5470
      • 1000:$0.4320
      • 2500:$0.3830
      • 10000:$0.3690
      IPD079N06L3 G
      DISTI # 726-IPD079N06L3G
      Infineon Technologies AGMOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
      RoHS: Compliant
      577
      • 1:$0.9400
      • 10:$0.8050
      • 100:$0.6190
      • 500:$0.5470
      • 1000:$0.4320
      • 2500:$0.3830
      • 10000:$0.3690
      IPD079N06L3GBTMA1
      DISTI # 8275088P
      Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS P3 TO252, RL2450
      • 250:£0.3210
      IPD079N06L3GBTMA1
      DISTI # IPD079N06L3GBTMA1
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,79W,PG-TO252-31757
      • 1:$0.7869
      • 5:$0.7398
      • 25:$0.6726
      • 100:$0.5717
      • 500:$0.4708
      IPD079N06L3GBTMA1
      DISTI # 2432728RL
      Infineon Technologies AGMOSFET, N CH, 60V, 50A, TO-252-3
      RoHS: Compliant
      0
      • 500:$0.8240
      • 100:$0.9330
      • 10:$1.2100
      • 1:$1.4200
      IPD079N06L3GBTMA1
      DISTI # 2432728
      Infineon Technologies AGMOSFET, N CH, 60V, 50A, TO-252-3
      RoHS: Compliant
      4534
      • 500:$0.8240
      • 100:$0.9330
      • 10:$1.2100
      • 1:$1.4200
      IPD079N06L3GBTMA1
      DISTI # 2432728
      Infineon Technologies AGMOSFET, N CH, 60V, 50A, TO-252-3
      RoHS: Compliant
      4664
      • 500:£0.4260
      • 250:£0.4540
      • 100:£0.4820
      • 25:£0.6260
      • 5:£0.7010
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      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of IPD079N06L3GBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.94
      $0.94
      10
      $0.80
      $8.05
      100
      $0.62
      $61.90
      500
      $0.55
      $273.50
      1000
      $0.43
      $432.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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