IPD079

IPD079N06L3 G vs IPD079N06L3 vs IPD079N06L3G

 
PartNumberIPD079N06L3 GIPD079N06L3IPD079N06L3G
DescriptionMOSFET N-Ch 60V 50A DPAK-2 OptiMOS 360V,7.9m��,50A,N-Channel Power MOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance6.3 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min36 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPD079N06L3GBTMA1 IPD79N6L3GXT SP000453626--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD079N06L3 G MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
IPD079N06L3GBTMA1 MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
IPD079N06L3GBTMA1 MOSFET N-CH 60V 50A TO252-3
IPD079N06L3GBTMA1-CUT TAPE New and Original
IPD079N06L3 New and Original
IPD079N06L3 G Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: IPD079N06L3 G)
IPD079N06L3G 60V,7.9m��,50A,N-Channel Power MOSFET
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