IRFZ48NPBF

Mfr. #:: IRFZ48NPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 55V 64A 14mOhm 54nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFZ48NPBF Datasheet
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HTML Datasheet:: IRFZ48NPBF Datasheet IRFZ48NPBF Datasheet (P4-P6)IRFZ48NPBF Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 55 V

Id - Continuous Drain Current:: 64 A

Rds On - Drain-Source Resistance:: 14 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 54 nC

Pd - Power Dissipation:: 94 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001552474

Unit Weight:: 0.211644 oz

Tags: IRFZ48N, IRFZ48, IRFZ4, IRFZ, IRF

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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IRFZ48NPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S

***eco: Transistor MOSFET N Channel 55 Volt 64 Amp 3 Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 53A/55V TO220 IRFZ 48 N PBF

***icontronic: Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Power Dissipation Ptot Max:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ure Electronics: N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***emi: N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ

***Yang: Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S

***eco: Transistor MOSFET Negative Channel 60 Volt 72A 3-Pin(3+Tab) TO-220AB

***ure Electronics: Single N-Channel 60 V 12 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 60V 72A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 60V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***eco: Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB

***ure Electronics: N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB

***emi: N-Channel Power MOSFET 60V, 70A, 14mΩ

***r Electronics: Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de

***ure Electronics: Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3

***eco: Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF

***Yang: Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***sible Micro: RoHS|YES|MEDIX|44222|TRANS MOSFET N-CH 55V 53A 3-PI|N(3+TAB) TO-220AB|

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W

***icontronic: Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 55V, 53A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF.

***nell: MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg

***ure Electronics: Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W

***nsix Microsemi: Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 55V 66A 3-Pin (3+Tab) TO-220AB Rail

***ponent Stockers USA: 66 A 55 V 0.016 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ment14 APAC: MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:66A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:16mohm; Package / Case:TO-220AB; Power Dissipation Pd:111W; Power Dissipation Pd:111W; Voltage Vgs th Max:3V

Market price

Part #	Mfg.	Description	Stock	Price
IRFZ48NPBF DISTI # V99:2348_13892564	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1889	25000:$0.3348 10000:$0.3720 2000:$0.4133 1000:$0.4592 500:$0.5742 100:$0.6346 10:$0.8265 1:$0.9528
IRFZ48NPBF DISTI # V36:1790_13892564	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	615	25000:$0.3348 10000:$0.3720 2000:$0.4133 1000:$0.4592 500:$0.5742 100:$0.6346 10:$0.8265 1:$0.9528
IRFZ48NPBF DISTI # IRFZ48NPBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 64A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	4638In Stock	1000:$0.5425 500:$0.6872 100:$0.8861 10:$1.1210 1:$1.2700
IRFZ48NPBF DISTI # 30163121	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	12097	500:$0.6307 100:$0.7277 32:$0.8342
IRFZ48NPBF DISTI # 29537212	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1889	1000:$0.4589 500:$0.5738 100:$0.6341 18:$0.8256
IRFZ48NPBF DISTI # 30613959	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1030	200:$0.9779 100:$1.0098 50:$1.2597 19:$1.2623
IRFZ48NPBF DISTI # 30535101	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	615	500:$0.5738 100:$0.6341 19:$0.8256
IRFZ48NPBF DISTI # IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 64A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ48NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$0.3809 10:$0.3749 25:$0.3699 50:$0.3649 100:$0.3519 500:$0.3399 1000:$0.3339
IRFZ48NPBF DISTI # IRFZ48NPBF	Infineon Technologies AG	Transistor MOSFET N-CH 55V 64A 3-Pin TO-220AB Tube (Alt: IRFZ48NPBF) RoHS: Compliant Min Qty: 2000 Container: Tube	Asia - 0	2000:$0.3187 4000:$0.3099 6000:$0.3015 10000:$0.2935 20000:$0.2897 50000:$0.2860 100000:$0.2824
IRFZ48NPBF DISTI # 63J7152	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 64A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	1320	1:$1.1500 10:$0.9950 100:$0.7810 500:$0.6990 1000:$0.5680 2500:$0.5120 10000:$0.4950
IRFZ48NPBF. DISTI # 27AC6857	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 64A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	0	1:$1.1700 10:$1.0200 100:$0.7970 500:$0.6990 1000:$0.5680 2500:$0.5120 10000:$0.4950
IRFZ48NPBF DISTI # 70017058	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 14 Milliohms,ID 64A,TO-220AB,PD 130W,gFS 24S RoHS: Compliant	102	1:$0.9850 10:$0.8690 100:$0.7580 500:$0.6570 1000:$0.5800
IRFZ48NPBF	Infineon Technologies AG	Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3 RoHS: Compliant	12300Tube	20:$0.5250 200:$0.4800 1000:$0.4150
IRFZ48NPBF DISTI # 942-IRFZ48NPBF	Infineon Technologies AG	MOSFET MOSFT 55V 64A 14mOhm 54nC RoHS: Compliant	5184	1:$1.0800 10:$0.9210 100:$0.7070 500:$0.6250 1000:$0.4940
IRFZ48N DISTI # N/A	Infineon Technologies AG	MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB	0
IRFZ48NPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	12	5:$1.0920 1:$1.3650
IRFZ48NPBF DISTI # 5409957	Infineon Technologies AG	MOSFET N-CHANNEL 55V 64A TO220AB, EA	1307	1:£2.0000 20:£0.6400 25:£0.6300
IRFZ48NPBF	International Rectifier		1749
IRFZ48NPBF DISTI # C1S322000497603	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1030	500:$0.6190 200:$0.7670 100:$0.7920 50:$0.9880 10:$0.9900 5:$1.1100
IRFZ48NPBF DISTI # C1S322000635230	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1889	1000:$0.4589 500:$0.5738 100:$0.6341 10:$0.8256
IRFZ48NPBF DISTI # C1S322000497597	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	12097	1000:$0.5470 500:$0.5950 100:$0.7240 50:$0.8120 25:$0.8930 5:$2.2300
IRFZ48NPBF DISTI # 1013497	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	2903	1:$1.7200 10:$1.4600 100:$1.1300 500:$0.9900 1000:$0.7820 2000:$0.6930 10000:$0.6660 25000:$0.6500
IRFZ48NPBF DISTI # 1013497	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	2070	5:£0.6530 25:£0.4800 100:£0.4440 250:£0.4080 500:£0.3600

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IRFZ48NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes