IPB016N06L3 G

Mfr. #:: IPB016N06L3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB016N06L3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB016N06L3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 1.2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 166 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 250 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 124 S

Fall Time:: 38 ns

Product Type:: MOSFET

Rise Time:: 79 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 131 ns

Typical Turn-On Delay Time:: 35 ns

Part # Aliases:: IPB016N06L3GATMA1 IPB16N6L3GXT SP000453040

Unit Weight:: 0.056438 oz

Tags: IPB016, IPB01, IPB0, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB016N06L3 G More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB016N06L3GATMA1 DISTI # V72:2272_06376928	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	326	250:$3.7070 100:$3.9090 25:$4.0500 10:$4.5000 1:$5.8190
IPB016N06L3GATMA1 DISTI # V36:1790_06376928	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$2.3470 500000:$2.3500 100000:$2.5570 10000:$2.9050 1000:$2.9620
IPB016N06L3GATMA1 DISTI # IPB016N06L3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1217In Stock	500:$3.0148 100:$3.5415 10:$4.3220 1:$4.8100
IPB016N06L3GATMA1 DISTI # IPB016N06L3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1217In Stock	500:$3.0148 100:$3.5415 10:$4.3220 1:$4.8100
IPB016N06L3GATMA1 DISTI # IPB016N06L3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$2.3451 1000:$2.4686
IPB016N06L3 G DISTI # 31310639	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R RoHS: Compliant	875	5:$5.1375
IPB016N06L3GATMA1 DISTI # 30679642	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	326	3:$5.8190
IPB016N06L3GXT DISTI # IPB016N06L3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB016N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 2000	6000:$2.0900 10000:$2.0900 4000:$2.1900 2000:$2.2900 1000:$2.3900
IPB016N06L3G DISTI # SP000453040	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000453040) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.8900 6000:€1.9900 2000:€2.0900 4000:€2.0900 1000:€2.1900
IPB016N06L3GATMA1 DISTI # 50Y2001	Infineon Technologies AG	MOSFET Transistor, N Channel, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V RoHS Compliant: Yes	99	500:$2.8100 250:$3.1300 100:$3.3000 50:$3.4700 25:$3.6400 10:$3.8100 1:$4.4800
IPB016N06L3 G DISTI # 726-IPB016N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1:$4.4400 10:$3.7700 100:$3.2700 250:$3.1000 500:$2.7800 1000:$2.3500 2000:$2.2300
IPB016N06L3GATMA1 DISTI # 726-IPB016N06L3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1:$4.4400 10:$3.7700 100:$3.2700 250:$3.1000 500:$2.7800 1000:$2.3500 2000:$2.2300
IPB016N06L3G	Infineon Technologies AG	180A, 60V, 0.0016OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263	3
IPB016N06L3GATMA1 DISTI # 2480796RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7 RoHS: Compliant	0	2000:$3.3600 1000:$3.5400 500:$4.1900 250:$4.6700 100:$4.9300 10:$5.6800 1:$6.6900
IPB016N06L3GATMA1 DISTI # 2480796	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7 RoHS: Compliant	2099	2000:$3.3600 1000:$3.5400 500:$4.1900 250:$4.6700 100:$4.9300 10:$5.6800 1:$6.6900
IPB016N06L3GATMA1 DISTI # 2480796	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7	2144	500:£2.1400 250:£2.3900 100:£2.5200 10:£2.9000 1:£3.8200
IPB016N06L3 G DISTI # TMOSP9055	Infineon Technologies AG	N-CH60V 180A2mOhm TO263-7 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$3.0900

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Availability

Stock:: Available
On Order:: 4500
Enter Quantity:

Current price of IPB016N06L3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$4.44~~; ~~$4.44~~

10: ~~$3.77~~; ~~$37.70~~

100: ~~$3.27~~; ~~$327.00~~

250: ~~$3.10~~; ~~$775.00~~

500: ~~$2.78~~; ~~$1 390.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB016N06L3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes