IPB016

IPB016N06L3 G vs IPB016N06L3GATMA1 vs IPB016N06L3G

 
PartNumberIPB016N06L3 GIPB016N06L3GATMA1IPB016N06L3G
DescriptionMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000453040)
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7TO-263-7-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance1.2 mOhms1.2 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge166 nC166 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min124 S124 S-
Fall Time38 ns38 ns-
Product TypeMOSFETMOSFET-
Rise Time79 ns79 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time131 ns131 ns-
Typical Turn On Delay Time35 ns35 ns-
Part # AliasesIPB016N06L3GATMA1 IPB16N6L3GXT SP000453040G IPB016N06L3 IPB16N6L3GXT SP000453040-
Unit Weight0.056438 oz0.056438 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB016N06L3 G MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
IPB016N06L3GATMA1 MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
IPB016N06L3GATMA1 MOSFET N-CH 60V 180A TO263-7
IPB016N06L3 G Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R
IPB016N06L3G Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000453040)
IPB016N06L3GS New and Original
Top