VBH40-05B

Name: IXYS - VBH40-05B
Brand: IXYS
SKU: OMO-7725231
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: VBH40-05B
Manufacturer:: IXYS
Description:: Discrete Semiconductor Modules 40 Amps 500V
Lifecycle:: New from this manufacturer.
Datasheet:: VBH40-05B Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: VBH40-05B Datasheet
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IXYS

Product Category: Module

Series: HiPerFET

Product: Power Semiconductor Modules

Type: H-Bridge MOSFET Modules

Packaging: Bulk

Mounting-Style: Screw

Package-Case: V2-PAK

Operating-Temperature: -40°C ~ 150°C (TJ)

Mounting-Type: Chassis Mount

Supplier-Device-Package: V2-PAK

FET-Type: 4 N-Channel (H-Bridge)

Power-Max: -

Drain-to-Source-Voltage-Vdss: 500V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 40A

Rds-On-Max-Id-Vgs: 116 mOhm @ 30A, 10V

Vgs-th-Max-Id: 4V @ 8mA

Gate-Charge-Qg-Vgs: 270nC @ 10V

Tags: VBH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

VBH40-05B Description

***ukat: N-Ch-H-Bridge+Rectif. 500V 40A V2-Pack

***i-Key: MOSFET 4N-CH 500V 40A V2

***el Nordic: Contact for details

***icroelectronics: N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET

***ser: Power MOSFET Transistors N-Ch 500 Volt 48 Amp

***ical: Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube

***ure Electronics: N-Channel 550 V 0.1 O MDmesh Power Mosfet - ISOTOP

***(Formerly Allied Electronics): MOSFET N-Channel 500V 48A ISOTOP4

***r Electronics: Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***et: STMICROELECTRONICS STE48NM50 MOSFETS

***ment14 APAC: MOSFET, N CH, 550V, 48A, ISOTOP; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:550V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:450W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:48A; Package / Case:ISOTOP; Power Dissipation Pd:450W; Termination Type:Screw; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET

***ser: Power MOSFET Transistors N-Ch 600 Volt 40 Amp

***ical: Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube

***(Formerly Allied Electronics): MOSFET N-Channel 600V 40A ISOTOP4

***ukat: N-Ch 600V 40A 460W 0,13R SOT227B

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***icroelectronics SCT: Power MOSFETs, 600V, 40A, ISOTOP, Tube

***et: STMICROELECTRONICS STE40NC60 MOSFETS

***nell: MOSFET, N SOT-227; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P

***icroelectronics: N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET

***ark: MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 53 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 30 / Fall Time ns = 38 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 46 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = ISOTOP / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Power Dissipation (Pd) W = 460

***icroelectronics: N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET

***ser: Power MOSFET Transistors N-Ch 500 Volt 70 Amp

***ical: Trans MOSFET N-CH 500V 70A 4-Pin ISOTOP Tube

***(Formerly Allied Electronics): MOSFET N-Channel 500V 70A MDMESH ISOTOP4

***ponent Stockers USA: 70 A 500 V 0.05 ohm N-CHANNEL Si POWER MOSFET

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***et: STMICROELECTRONICS STE70NM50 MOSFETS

***nell: MOSFET, N CH, 500V, 70A, ISOTOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 600W; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Screw; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP

***ical: Trans IGBT Module N-CH 600V 200A 600000mW 4-Pin ISOTOP Tube

***el Electronic: STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 150Amp

***(Formerly Allied Electronics): Transistor IGBT N-Ch 600V 200A ISOTOP4

***ronik: IGBT 600V 200A 1.6V ISOTOP RoHSconf

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel

***icroelectronics SCT: Short-circuit rugged IGBT, ISOTOP, Tube

***trelec: N-Channel IGBT, 600V, 200A, ISOTOP

***nell: IGBT MODULE, 600V, 200A, 600W; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.2V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4

***i-Key: IGBT MOD 600V 200A 600W ISOTOP

***icroelectronics: N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP package

***ure Electronics: N-Channel 650 V 15 mO 414 nC Chassis Mount Power Mosfet - ISOTOP

***ark: MOSFET, N-CH, 650V, 143A, ISOTOP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:143A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:4Pins RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
VBH40-05B DISTI # VBH40-05B-ND	IXYS Corporation	MOSFET 4N-CH 500V 40A V2 RoHS: Compliant Min Qty: 6 Container: Box	Temporarily Out of Stock	6:$82.2033
VBH40-05B DISTI # 747-VBH40-05B	IXYS Corporation	Discrete Semiconductor Modules 40 Amps 500V RoHS: Compliant	0

VBH40-05B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes