SI4362BDY-T1-E3

SI4362BDY-T1-E3
Mfr. #:
SI4362BDY-T1-E3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 19.8A 6.6W
Lifecycle:
New from this manufacturer.
Datasheet:
SI4362BDY-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SI4362BDY-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer
Product Category
IC Chips
Packaging
Reel
Part-Aliases
SI4362BDY-E3
Unit-Weight
0.006596 oz
Mounting-Style
SMD/SMT
Package-Case
SOIC-Narrow-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
3 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
7 ns 8 ns
Rise-Time
11 ns 10 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuous-Drain-Current
19.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
4.6 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
41 ns 47 ns
Typical-Turn-On-Delay-Time
26 ns 12 ns
Channel-Mode
Enhancement
Tags
SI4362, SI436, SI43, SI4
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 29A 8-SOIC
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4362BDY-T1-E3
DISTI # SI4362BDY-T1-E3-ND
Vishay SiliconixMOSFET N-CH 30V 29A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4362BDY-T1-E3
    DISTI # 781-SI4362BDY-E3
    Vishay IntertechnologiesMOSFET 30V 19.8A 6.6W
    RoHS: Compliant
    0
    • 1:$2.6800
    • 10:$2.2200
    • 100:$1.7200
    • 500:$1.5100
    • 1000:$1.2500
    • 2500:$1.1700
    • 5000:$1.1200
    Image Part # Description
    SI4362BDY-T1-E3

    Mfr.#: SI4362BDY-T1-E3

    OMO.#: OMO-SI4362BDY-T1-E3

    MOSFET 30V 19.8A 6.6W
    SI4362BDY-T1-GE3

    Mfr.#: SI4362BDY-T1-GE3

    OMO.#: OMO-SI4362BDY-T1-GE3

    MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    SI4362BDY-T1-E3

    Mfr.#: SI4362BDY-T1-E3

    OMO.#: OMO-SI4362BDY-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 30V 19.8A 6.6W
    SI4362BDY-T1-GE3

    Mfr.#: SI4362BDY-T1-GE3

    OMO.#: OMO-SI4362BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of SI4362BDY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.68
    $1.68
    10
    $1.60
    $15.96
    100
    $1.51
    $151.20
    500
    $1.43
    $714.00
    1000
    $1.34
    $1 344.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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