SIA813DJ-T1-GE3

SIA813DJ-T1-GE3
Mfr. #:
SIA813DJ-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SIA813DJ-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Packaging
Reel
Part-Aliases
SIA813DJ-GE3
Unit-Weight
0.000988 oz
Mounting-Style
SMD/SMT
Package-Case
SC-70-6
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single with Schottky Diode
Transistor-Type
1 P-Channel
Pd-Power-Dissipation
2.3 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
50 ns
Rise-Time
35 ns
Vgs-Gate-Source-Voltage
8 V
Id-Continuous-Drain-Current
3.6 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Resistance
94 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
40 ns
Typical-Turn-On-Delay-Time
10 ns
Channel-Mode
Enhancement
Tags
SIA81, SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 20V 3.6A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET P-CH 20V 4.5A SC70-6
***ment14 APAC
P CHANNEL MOSFET, -20V, 4.5A, SC-70; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):460mohm; Rds(on) Test Voltage Vgs:8V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4500mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.46ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
SIA813DJ-T1-GE3
DISTI # SIA813DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.3350
SIA813DJ-T1-GE3
DISTI # SIA813DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA813DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3049
  • 6000:$0.2959
  • 12000:$0.2839
  • 18000:$0.2759
  • 30000:$0.2689
SIA813DJ-T1-GE3
DISTI # 781-SIA813DJ-T1-GE3
Vishay IntertechnologiesMOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3050
  • 6000:$0.2840
  • 9000:$0.2740
  • 24000:$0.2630
Image Part # Description
SIA813DJ-T1-GE3

Mfr.#: SIA813DJ-T1-GE3

OMO.#: OMO-SIA813DJ-T1-GE3

MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
SIA813DJ-T1-GE3

Mfr.#: SIA813DJ-T1-GE3

OMO.#: OMO-SIA813DJ-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of SIA813DJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.39
$0.39
10
$0.37
$3.75
100
$0.36
$35.51
500
$0.34
$167.65
1000
$0.32
$315.60
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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