TGF2160

TGF2160
Mfr. #:
TGF2160
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2160 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
TGF2160 more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tray
Part-Aliases
1098617
Mounting-Style
SMD/SMT
Operating-Temperature-Range
- 65 C to + 150 C
Technology
GaAs
Configuration
Dual
Transistor-Type
pHEMT
Gain
10.4 dB
Pd-Power-Dissipation
5.6 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 65 C
Operating-Frequency
20 GHz
Id-Continuous-Drain-Current
517 mA
Vds-Drain-Source-Breakdown-Voltage
12 V
Forward-Transconductance-Min
619 mS
Vgs-Gate-Source-Breakdown-Voltage
- 7 V
P1dB-Compression-Point
32.5 dBm
Tags
TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2160 1600µm Discrete GaAs pHEMT
Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Part # Mfg. Description Stock Price
TGF2160
DISTI # 772-TGF2160
QorvoRF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
RoHS: Compliant
0
  • 100:$17.2700
  • 300:$16.1400
  • 500:$15.0900
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TG FIBER SPOOL BRACKET
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of TGF2160 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$22.64
$22.64
10
$21.50
$215.03
100
$20.37
$2 037.15
500
$19.24
$9 619.90
1000
$18.11
$18 108.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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