TGF2929-FS

TGF2929-FS
Mfr. #:
TGF2929-FS
Manufacturer:
Qorvo
Description:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2929-FS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2929-FS more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
N-Channel
Technology:
GaN SiC
Id - Continuous Drain Current:
12 A
Vds - Drain-Source Breakdown Voltage:
28 V
Gain:
14 dB
Output Power:
107 W
Packaging:
Tray
Operating Frequency:
3.5 GHz
Type:
RF Power MOSFET
Brand:
Qorvo
Moisture Sensitive:
Yes
Pd - Power Dissipation:
144 W
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
145 V
Vgs th - Gate-Source Threshold Voltage:
- 2.9 V
Part # Aliases:
1123716
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN, Flangeless
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2929-FS
DISTI # 772-TGF2929-FS
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
23
  • 1:$351.0000
  • 25:$316.7800
TGF2929-FS/FL, 3.1-3.5GHZ EVB
DISTI # 772-TGF2929-FS/FL-EV
QorvoRF Development Tools DC-3.5GHz 100W Eval Board
RoHS: Compliant
1
  • 1:$875.0000
1123716
DISTI # TGF2929-FS
QorvoRF POWER TRANSISTOR
RoHS: Compliant
10
  • 1:$90.0000
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TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS-319

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Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

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Mfr.#: TGF2942

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TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

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TGF2960-SD.

Mfr.#: TGF2960-SD.

OMO.#: OMO-TGF2960-SD--1190

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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of TGF2929-FS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
25
$316.78
$7 919.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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