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TGF2954

TGF2954
Mfr. #:
TGF2954
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2954 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2954 more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
18.6 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
18 A
Output Power:
330 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 130 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440162
Packaging:
Tube
Application:
-
Configuration:
Single
Height:
3.78 mm
Length:
20.45 mm
Operating Frequency:
1.2 GHz to 1.4 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
10.29 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
CGHV14250F-TB
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
50
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
TGF295, TGF29, TGF2, TGF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 12 GHz, 27 W, 19.6 dB, 32 V, GaN, DIE
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2954
DISTI # 772-TGF2954		QorvoRF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
RoHS: Compliant		4
  • 1:$69.3000
  • 25:$59.9400
  • 100:$51.8400
1112246
DISTI # TGF2954		QorvoRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$6.4000
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of TGF2954 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$69.30
$69.30
25
$59.94
$1 498.50
100
$51.84
$5 184.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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