SKM22GD123D

SKM22GD123D
Mfr. #:
SKM22GD123D
Manufacturer:
SEMIKRON
Description:
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
SKM22GD123D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
SKM22G, SKM22, SKM2, SKM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1.2KV 25A 12-Pin Case D-67
***ark
Igbt Module, 1.2Kv, 25A, Semitrans 6; Transistor Polarity:n Channel; Dc Collector Current:22A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:145W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Product Range:- Rohs Compliant: Yes
***nell
IGBT MODULE, 3-PHASE BRIDGE; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:25A; Voltage, Vce Sat Max:3V; Case Style:SEMITRANS 6; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:15A; Current Ic av:25A; Current, Icm Pulsed:25A; External Depth:45mm; External Length / Height:24mm; Fixing Centres:82mm; Fixing Hole Diameter:2.5mm; Power, Pd:145W; Power, Ptot:145W; Temperature, Current:25°C; Time, Rise:35ns; Transistors, No. of:6; Width, External:105mm
***ikron
not recommended for new design Features: MOS input (voltage controlled) N channel, homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (9 mm) and creepage distances (13 mm) Typical Applications: Switched mode power supplies Three phase inverters for AC motor speed control General power switching applications Pulse frequencies also above 15 kHz
Part # Mfg. Description Stock Price
SKM 22GD123D
DISTI # 69K7649
SEMIKRONIGBT MODULE, 1.2KV, 25A, SEMITRANS 6,Transistor Polarity:N Channel,DC Collector Current:22A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:145W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    SKM22GD123D
    DISTI # 9563008
    SEMIKRON 
    RoHS: Compliant
    0
    • 50:$249.9000
    • 20:$275.4000
    • 10:$280.5000
    • 5:$285.6000
    • 1:$300.9000
    SKM22GD123DSEMIKRONInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant
    2
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      SKM22GD123D

      Mfr.#: SKM22GD123D

      OMO.#: OMO-SKM22GD123D-1190

      Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of SKM22GD123D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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