IPB114N03L G

Mfr. #:: IPB114N03L G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 30A D2PAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB114N03L G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 11.4 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 38 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 2.4 ns

Product Type:: MOSFET

Rise Time:: 3 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 15 ns

Typical Turn-On Delay Time:: 3.8 ns

Part # Aliases:: IPB114N03LGXT

Unit Weight:: 0.139332 oz

Tags: IPB114, IPB11, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB114N03L G Description

***et Europe: Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-263

***i-Key: MOSFET N-CH 30V 30A TO263-3

***el Nordic: Contact for details

***nell: MOSFET, N CH, 30A, 30V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po

Market price

Part #	Mfg.	Description	Stock	Price
IPB114N03L G DISTI # IPB114N03LG-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB114N03L G DISTI # 726-IPB114N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 30A D2PAK-2 RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: IPB114N03L G OMO.#: OMO-IPB114N03L-G	MOSFET N-Ch 30V 30A D2PAK-2
	Mfr.#: IPB114N03L OMO.#: OMO-IPB114N03L-1190	New and Original
	Mfr.#: IPB114N03L G OMO.#: OMO-IPB114N03L-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A TO263-3
	Mfr.#: IPB114N03LG OMO.#: OMO-IPB114N03LG-1190	New and Original

IPB114N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes