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FQP8P10

FQP8P10
Mfr. #:
FQP8P10
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 100V P-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQP8P10 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
530 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
65 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
QFET
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FQP8P10
Transistor Type:
1 P-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
4.3 S
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
110 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.063493 oz
Tags
FQP8, FQP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***u
    M***u
    CA

    looks good thks

    2019-04-02
    V***n
    V***n
    RU

    Normal

    2019-01-09
***Components
In a Tube of 50, P-Channel MOSFET, 5.7 A, 100 V, 3-Pin TO-220 ON Semiconductor FQP8P10
***Semiconductor
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220
*** Electronics
TRANSISTOR MOSFET P-CHAN E-MODE TO-220
***ical
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail
***i-Key
MOSFET P-CH 100V 8A TO-220
***ure Electronics
100V, 8A, 0.53OHM, P-CHANNEL, TO-220
***ser
MOSFETs 100V P-Channel QFET
***inecomponents.com
100V P-Channel QFET®
***ark
Mosfet, P, To-220; Transistor Polarity:p Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W Rohs Compliant: No
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
Prices include import duty and tax. MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:-8A; Device Marking:FQP8P10; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V
***nell
MOSFET, P, TO-220; Biegunowość tranzystora:Kanał P; Prąd ciągły Id drenu:8A; Napięcie drenu / źródła Vds:-100V; Rezystancja przewodzenia Rds(on):0.41ohm; Napięcie Vgs pomiaru Rds(on):-10V; Napięcie progowe Vgs:-4V; Straty mocy Pd:65W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:Lead (27-Jun-2018); Maks. prąd Id:-8A; Napięcie Vds, typ.:-100V; Napięcie Vgs pomiaru Rds on:-10V; Napięcie Vgs, maks.:-30V; Oznaczenie układu:FQP8P10; Prąd impulsowy Idm:32A; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +175°C
Part # Mfg. Description Stock Price
FQP8P10
DISTI # V36:1790_06301292		ON SemiconductorQF -100V 530MOHM TO2200
  • 1000000:$0.3139
  • 500000:$0.3148
  • 100000:$0.4927
  • 10000:$0.9130
  • 1000:$0.9900
FQP8P10
DISTI # FQP8P10FS-ND		ON SemiconductorMOSFET P-CH 100V 8A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1031In Stock
  • 5000:$0.4185
  • 3000:$0.4406
  • 1000:$0.4720
  • 100:$0.7238
  • 25:$0.8812
  • 10:$0.9280
  • 1:$1.0400
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1000:€0.3229
  • 500:€0.3479
  • 100:€0.3769
  • 50:€0.4119
  • 25:€0.4529
  • 10:€0.5029
  • 1:€0.5659
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 1985
  • 500:$0.3209
  • 250:$0.3289
  • 150:$0.3339
  • 100:$0.3379
  • 50:$0.3399
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 715
Container: Bulk		Americas - 0
  • 7150:$0.4319
  • 3575:$0.4429
  • 2145:$0.4479
  • 1430:$0.4539
  • 715:$0.4569
FQP8P10.
DISTI # 14J0096		ON SemiconductorMOSFET, P, TO-220,Transistor Polarity:P Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:65W RoHS Compliant: No3259
  • 1000:$0.4550
  • 500:$0.5760
  • 100:$0.6510
  • 10:$0.8480
  • 1:$1.0000
FQP8P10.
DISTI # 27AC5844		Fairchild Semiconductor CorporationQF -100V 530MOHM TO220 ROHS COMPLIANT: YES0
  • 500:$0.3310
  • 250:$0.3390
  • 150:$0.3440
  • 100:$0.3480
  • 1:$0.3500
FQP8P10
DISTI # 512-FQP8P10		ON SemiconductorMOSFET 100V P-Channel QFET
RoHS: Compliant		2285
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6450
  • 500:$0.5700
  • 1000:$0.4500
FQP8P10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6708
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
FQP8P10
DISTI # 8075879		ON SemiconductorMOSFETFAIRCHILDFQP8P10, PK1150
  • 1000:£0.3200
  • 500:£0.3740
  • 100:£0.4580
  • 50:£0.5270
  • 10:£0.5960
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4254
  • 1000:$0.6920
  • 500:$0.8770
  • 100:$0.9920
  • 10:$1.3000
  • 1:$1.5200
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4272
  • 500:£0.4440
  • 250:£0.4730
  • 100:£0.5020
  • 10:£0.7100
  • 1:£0.8800
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of FQP8P10 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.99
$0.99
10
$0.84
$8.40
100
$0.64
$64.50
500
$0.57
$285.00
1000
$0.45
$450.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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