PartNumber | FQP8N80C | FQP85N06 | FQP8N60C |
Description | MOSFET 800V N-Ch Q-FET advance C-Series | MOSFET 60V N-Channel QFET | MOSFET 600V N-Ch Q-FET advance C-Series |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 60 V | 600 V |
Id Continuous Drain Current | 8 A | 85 A | 7.5 A |
Rds On Drain Source Resistance | 1.55 Ohms | 10 mOhms | 1.2 Ohms |
Vgs Gate Source Voltage | 30 V | 25 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 178 W | 160 W | 147 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | QFET | QFET | - |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQP8N80C | FQP85N06 | FQP8N60C |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 5.6 S | 54 S | 8.7 S |
Fall Time | 70 ns | 170 ns | 64.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 110 ns | 230 ns | 60.5 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 65 ns | 175 ns | 81 ns |
Typical Turn On Delay Time | 40 ns | 40 ns | 16.5 ns |
Part # Aliases | FQP8N80C_NL | FQP85N06_NL | FQP8N60C_NL |
Unit Weight | 0.063493 oz | 0.063493 oz | 0.063493 oz |