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FQP8N60C

FQP8N60C
Mfr. #:
FQP8N60C
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 600V N-Ch Q-FET advance C-Series
Lifecycle:
New from this manufacturer.
Datasheet:
FQP8N60C Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
7.5 A
Rds On - Drain-Source Resistance:
1.2 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
147 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FQP8N60C
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
8.7 S
Fall Time:
64.5 ns
Product Type:
MOSFET
Rise Time:
60.5 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
81 ns
Typical Turn-On Delay Time:
16.5 ns
Part # Aliases:
FQP8N60C_NL
Unit Weight:
0.063493 oz
Tags
FQP8N60C, FQP8N60, FQP8N6, FQP8N, FQP8, FQP
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Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
600V 7.5A 147W 1.2´Î@10V3.75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.2ohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Part # Mfg. Description Stock Price
FQP8N60C
DISTI # FQP8N60C-ND		ON SemiconductorMOSFET N-CH 600V 7.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$1.0170
  • 500:$1.2274
  • 100:$1.5781
  • 10:$1.9640
  • 1:$2.1700
FQP8N60C
DISTI # FQP8N60C		ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7599
  • 2000:$0.7559
  • 4000:$0.7459
  • 6000:$0.7359
  • 10000:$0.7179
FQP8N60C
DISTI # 97K0198		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- , RoHS Compliant: Yes0
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2500:$0.8610
  • 5000:$0.8290
FQP8N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		43736
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
FQP8N60C
DISTI # 512-FQP8N60C		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Compliant		926
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2000:$0.8610
  • 5000:$0.8290
  • 10000:$0.7970
FQP8N60C_Q
DISTI # 512-FQP8N60C_Q		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Not compliant		0
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		47
    • 5:£1.1600
    • 25:£1.0600
    • 100:£0.8100
    • 250:£0.7630
    • 500:£0.7160
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		52
    • 1:$1.5100
    FQP8N60C
    DISTI # XSFP00000021118    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		3365
    • 1000:$1.8700
    • 3365:$1.7000
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    Availability
    Stock:
    635
    On Order:
    2618
    Enter Quantity:
    Current price of FQP8N60C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.86
    $1.86
    10
    $1.58
    $15.80
    100
    $1.27
    $127.00
    500
    $1.10
    $550.00
    1000
    $0.92
    $920.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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