ON Semiconductor helped pioneer trench MOSFETs in the early 1990s and they have been perfecting MOSFET technology and manufacturing since then to develop a large portfolio of thousands of products for any application.

ON Semiconductor's FDMS86181 advanced 100 V shielded gate PowerTrench MOSFET is the latest in this rich family with what is currently the lowest R_DS(ON) and Q_rr in its class and fastest reverse recovery while delivering the highest efficiency. FDMS86181 has little to no voltage overshoot, reduces voltage ringing, and improves EMI for applications requiring a 100 V-rated MOSFET for power supplies and motor drives. Its increased power density allows wider MOSFET de-rating so designers do not have to overdesign.

FDMS86181 is the first in a family with multiple voltage and package options coming soon.