IXFB100N50P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

PLUS-264-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

49 mOhms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

240 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.25 kW

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

26.59 mm

Length:

20.29 mm

Series:

IXFB100N50

Transistor Type:

1 N-Channel

Type:

PolarHV HiPerFET Power MOSFET

Width:

5.31 mm

Brand:

IXYS

Forward Transconductance - Min:

50 S

Fall Time:

26 ns

Product Type:

MOSFET

Rise Time:

29 ns

Factory Pack Quantity:

25

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

110 ns

Typical Turn-On Delay Time:

36 ns

Unit Weight:

0.056438 oz

Tags

IXFB100N5, IXFB10, IXFB1, IXFB, IXF