IPB110N20N3LFATMA1

Mfr. #:: IPB110N20N3LFATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: IPB110N20N3LFATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 88 A

Rds On - Drain-Source Resistance:: 9.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 76 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 250 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: Optimos

Packaging:: Reel

Series:: Optimos 5

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Forward Transconductance - Min:: 16 S

Fall Time:: 26 ns

Product Type:: MOSFET

Rise Time:: 70 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 79 ns

Typical Turn-On Delay Time:: 6 ns

Part # Aliases:: IPB110N20N3LF SP001503864

Unit Weight:: 0.077603 oz

Tags: IPB110, IPB11, IPB1, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB110N20N3LFATMA1 Description

***ical: Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 200 D2PAK-3

***ronik: N-CH 200V 88A 11mOhm D2PAK

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 200V, 88A, 250W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 200V, 88A, 250W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0098ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.2V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Market price

Part #	Mfg.	Description	Stock	Price
IPB110N20N3LFATMA1 DISTI # V72:2272_17076776	Infineon Technologies AG	DIFFERENTIATED MOSFETS	58	25:$5.6780 10:$5.9310 1:$6.5000
IPB110N20N3LFATMA1 DISTI # V36:1790_17076776	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2966In Stock	500:$5.1425 100:$6.1379 10:$7.4650 1:$8.2900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2966In Stock	500:$5.1425 100:$6.1379 10:$7.4650 1:$8.2900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	2000:$4.1875 1000:$4.3485
IPB110N20N3LFATMA1 DISTI # 26196752	Infineon Technologies AG	DIFFERENTIATED MOSFETS	58	25:$6.1039 10:$6.3758 2:$6.9875
IPB110N20N3LFATMA1 DISTI # SP001503864	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503864) RoHS: Compliant Min Qty: 1000	Europe - 1000	1000:€3.8900 2000:€3.7900 4000:€3.5900 6000:€3.3900 10000:€3.0900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB110N20N3LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$4.1900 2000:$3.9900 4000:$3.8900 6000:$3.6900 10000:$3.6900
IPB110N20N3LFATMA1 DISTI # 93AC7102	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes	1000	500:$3.6200 250:$3.9800 100:$4.1700 50:$4.4800 25:$4.8000 10:$5.0300 1:$5.5700
IPB110N20N3LFATMA1 DISTI # 726-IPB110N20N3LFATM	Infineon Technologies AG	MOSFET RoHS: Compliant	1825	1:$6.9600 10:$6.2900 25:$6.0000 100:$5.2100 250:$4.9700 500:$4.5300 1000:$3.9500 2000:$3.8000
IPB110N20N3LFATMA1 DISTI # XSKDRABV0021212	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$6.0000 1000:$6.4320
IPB110N20N3LFATMA1 DISTI # 2986460	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263 RoHS: Compliant	1000	100:£4.0100 50:£4.3300 10:£4.6400 5:£5.3500 1:£5.8300
IPB110N20N3LFATMA1 DISTI # 2986460	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263 RoHS: Compliant	1000	100:$5.9000 50:$6.5880 25:$7.6494 10:$7.7958 5:$8.3997 1:$9.3147

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IPB110N20N3LFATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.96~~; ~~$6.96~~

10: ~~$6.29~~; ~~$62.90~~

25: ~~$6.00~~; ~~$150.00~~

100: ~~$5.21~~; ~~$521.00~~

250: ~~$4.97~~; ~~$1 242.50~~

500: ~~$4.53~~; ~~$2 265.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB110N20N3LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes