PartNumber | IPB110N20N3LFATMA1 | IPB110P06LMATMA1 | IPB110N06L G |
Description | MOSFET | MOSFET TRENCH 40<-<100V | MOSFET N-CH 60V 78A TO-263 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | - 60 V | - |
Id Continuous Drain Current | 88 A | - 100 A | - |
Rds On Drain Source Resistance | 9.8 mOhms | 11 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 76 nC | - 281 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 250 W | 300 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | Optimos | - | - |
Packaging | Reel | Reel | - |
Series | Optimos 5 | IPB06P001 | - |
Transistor Type | 1 N-Channel | 1 P-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 16 S | 100 S | - |
Fall Time | 26 ns | 74 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 70 ns | 33 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 79 ns | 277 ns | - |
Typical Turn On Delay Time | 6 ns | 22 ns | - |
Part # Aliases | IPB110N20N3LF SP001503864 | IPB110P06LM SP004987252 | - |
Unit Weight | 0.077603 oz | - | - |