IPB110P06LMATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

- 60 V

Id - Continuous Drain Current:

- 100 A

Rds On - Drain-Source Resistance:

11 mOhms

Vgs th - Gate-Source Threshold Voltage:

- 2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

- 281 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

IPB06P001

Transistor Type:

1 P-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

100 S

Fall Time:

74 ns

Product Type:

MOSFET

Rise Time:

33 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

277 ns

Typical Turn-On Delay Time:

22 ns

Part # Aliases:

IPB110P06LM SP004987252

Tags

IPB110, IPB11, IPB1, IPB