SKP10N60

SKP10N60
Mfr. #:
SKP10N60
Manufacturer:
INF
Description:
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
SKP10N60 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INF
Product Category
IGBTs - Single
Tags
SKP10N6, SKP10N, SKP10, SKP1, SKP
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, FAST; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.4V; Power Dissipation Pd: 92W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tempe
***ark
IGBT, FAST; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.4V; Power Dissipation:92W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter ;RoHS Compliant: Yes
***ment14 APAC
IGBT, FAST; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:92W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Current Ic @ Vce Sat:10A; Current Ic Continuous a Max:20A; Current Temperature:25°C; Device Marking:SKP10N60; Fall Time tf:29ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Pin Format:1G, 2C, 3E; Power Dissipation Max:92W; Power Dissipation Pd:92W; Power Dissipation Ptot Max:92W; Pulsed Current Icm:40A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Part # Mfg. Description Stock Price
SKP10N60AXKSA1
DISTI # SKP10N60AXKSA1-ND
Infineon Technologies AGIGBT 600V 20A 92W TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    SKP10N60A
    DISTI # 726-SKP10N60A
    Infineon Technologies AGIGBT Transistors FAST IGBT NPT TECH 600V 10A
    RoHS: Compliant
    0
      SKP10N60AXKSA1
      DISTI # N/A
      Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
        SKP10N60Infineon Technologies AGInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant
        69958
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          Availability
          Stock:
          Available
          On Order:
          3000
          Enter Quantity:
          Current price of SKP10N60 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $0.00
          $0.00
          10
          $0.00
          $0.00
          100
          $0.00
          $0.00
          500
          $0.00
          $0.00
          1000
          $0.00
          $0.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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