IPB65R420CFDATMA1

Mfr. #:: IPB65R420CFDATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LOW POWER_LEGACY
Lifecycle:: New from this manufacturer.
Datasheet:: IPB65R420CFDATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Configuration:: Single

Tradename:: CoolMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: IPB65R420CFDATMA1 SP000890680

Unit Weight:: 0.139332 oz

Tags: IPB65R4, IPB65, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R420CFDATMA1 Description

***et Europe: Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-263 T/R

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO263-3, RoHS

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

Market price

Part #	Mfg.	Description	Stock	Price
IPB65R420CFDATMA1 DISTI # IPB65R420CFDATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 8.7A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB65R420CFDATMA1 DISTI # IPB65R420CFDATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 8.7A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB65R420CFDATMA1 DISTI # IPB65R420CFDATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 8.7A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB65R420CFDATMA1 DISTI # IPB65R420CFDATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-263 T/R - Bulk (Alt: IPB65R420CFDATMA1) Min Qty: 391 Container: Bulk	Americas - 0	3910:$0.8129 1955:$0.8269 1173:$0.8559 782:$0.8879 391:$0.9219
IPB65R420CFDATMA1 DISTI # IPB65R420CFD	Infineon Technologies AG	Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-263 T/R - Bulk (Alt: IPB65R420CFD) RoHS: Not Compliant Min Qty: 439 Container: Bulk	Americas - 0	4390:$0.7239 2195:$0.7369 1317:$0.7629 878:$0.7909 439:$0.8209
IPB65R420CFD DISTI # 726-IPB65R420CFD	Infineon Technologies AG	MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2 RoHS: Compliant	165	1:$1.8400 10:$1.5600 100:$1.2500 500:$1.1000 1000:$0.9050
IPB65R420CFDATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPB65R420CFDATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	28779	1000:$0.8400 500:$0.8900 100:$0.9200 25:$0.9600 1:$1.0400
IPB65R420CFDATMA1 DISTI # 2480808RL	Infineon Technologies AG	MOSFET, N-CH, 650V, 8.7A, TO-263-3 RoHS: Compliant	0	1000:$1.3900 500:$1.7000 100:$1.9200 10:$2.4000 1:$2.8300
IPB65R420CFDATMA1 DISTI # 2480808	Infineon Technologies AG	MOSFET, N-CH, 650V, 8.7A, TO-263-3 RoHS: Compliant	0	1000:$1.3900 500:$1.7000 100:$1.9200 10:$2.4000 1:$2.8300
IPB65R420CFDATMA1 DISTI # 2480808	Infineon Technologies AG	MOSFET, N-CH, 650V, 8.7A, TO-263-3	0	500:£0.8400 250:£0.8960 100:£0.9520 10:£1.2300 1:£1.6000

Image	Part #	Description
	Mfr.#: IPB65R420CFDATMA1 OMO.#: OMO-IPB65R420CFDATMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPB65R420CFDATMA1 OMO.#: OMO-IPB65R420CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 8.7A TO263
	Mfr.#: IPB65R420CFDA OMO.#: OMO-IPB65R420CFDA-1190	New and Original
	Mfr.#: IPB65R420CFD OMO.#: OMO-IPB65R420CFD-126	IGBT Transistors MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2

IPB65R420CFDATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes