SI6968BEDQ-T1-GE3

SI6968BEDQ-T1-GE3
Mfr. #:
SI6968BEDQ-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 20V 5.2A 8-TSSOP
Lifecycle:
New from this manufacturer.
Datasheet:
SI6968BEDQ-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI6968BEDQ-T1-GE3 more Information
Product Attribute
Attribute Value
Tags
SI6968BEDQ-T1, SI6968BEDQ-T, SI6968BEDQ, SI6968BED, SI6968B, SI6968, SI696, SI69, SI6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Part # Mfg. Description Stock Price
SI6968BEDQ-T1-GE3
DISTI # V72:2272_09215423
Vishay IntertechnologiesTrans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R
RoHS: Compliant
852
  • 500:$0.3487
  • 250:$0.4693
  • 100:$0.4738
  • 25:$0.6135
  • 10:$0.6818
  • 1:$0.7821
SI6968BEDQ-T1-GE3
DISTI # V36:1790_09215423
Vishay IntertechnologiesTrans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R
RoHS: Compliant
0
    SI6968BEDQ-T1-GE3
    DISTI # SI6968BEDQ-T1-GE3CT-ND
    Vishay SiliconixMOSFET 2N-CH 20V 5.2A 8-TSSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    9161In Stock
    • 1000:$0.2692
    • 500:$0.3366
    • 100:$0.4258
    • 10:$0.5550
    • 1:$0.6300
    SI6968BEDQ-T1-GE3
    DISTI # SI6968BEDQ-T1-GE3DKR-ND
    Vishay SiliconixMOSFET 2N-CH 20V 5.2A 8-TSSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    9161In Stock
    • 1000:$0.2692
    • 500:$0.3366
    • 100:$0.4258
    • 10:$0.5550
    • 1:$0.6300
    SI6968BEDQ-T1-GE3
    DISTI # SI6968BEDQ-T1-GE3TR-ND
    Vishay SiliconixMOSFET 2N-CH 20V 5.2A 8-TSSOP
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    9000In Stock
    • 15000:$0.2178
    • 6000:$0.2206
    • 3000:$0.2369
    SI6968BEDQ-T1-GE3
    DISTI # 28952739
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R
    RoHS: Compliant
    852
    • 500:$0.3487
    • 250:$0.4693
    • 100:$0.4738
    • 27:$0.6135
    SI6968BEDQ-T1-GE3
    DISTI # SI6968BEDQ-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6968BEDQ-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.2419
    • 18000:$0.2479
    • 12000:$0.2549
    • 6000:$0.2659
    • 3000:$0.2739
    SI6968BEDQ-T1-GE3
    DISTI # 33P5362
    Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1W RoHS Compliant: Yes0
    • 10000:$0.3810
    • 6000:$0.3900
    • 4000:$0.4050
    • 2000:$0.4500
    • 1000:$0.4950
    • 1:$0.5160
    SI6968BEDQ-T1-GE3
    DISTI # 69W7218
    Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1W RoHS Compliant: Yes0
    • 1000:$0.5880
    • 500:$0.6630
    • 250:$0.7920
    • 100:$0.8730
    • 50:$0.9690
    • 25:$1.0700
    • 1:$1.1300
    SI6968BEDQ-T1-GE3
    DISTI # 70616997
    Vishay SiliconixSI6968BEDQ-T1-GE3 Dual N-channel MOSFETTransistor,5.2 A,20 V,8-Pin TSSOP
    RoHS: Compliant
    0
    • 300:$0.5100
    • 600:$0.5000
    • 1500:$0.4900
    • 3000:$0.4800
    SI6968BEDQ-T1-GE3
    DISTI # 781-SI6968BEDQ-T1GE3
    Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSSOP-8
    RoHS: Compliant
    8010
    • 1:$0.8400
    • 10:$0.6760
    • 100:$0.5130
    • 500:$0.4240
    • 1000:$0.3390
    • 3000:$0.3070
    • 6000:$0.2860
    • 9000:$0.2760
    SI6968BEDQT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    3000
      SI6968BEDQ-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSSOP-8
      RoHS: Compliant
      Americas -
        SI6968BEDQ-T1-GE3
        DISTI # XSFP00000063496
        Vishay Siliconix 
        RoHS: Compliant
        30000 in Stock0 on Order
        • 30000:$0.4909
        • 3000:$0.5400
        Image Part # Description
        SI6968BEDQ-T1-GE3

        Mfr.#: SI6968BEDQ-T1-GE3

        OMO.#: OMO-SI6968BEDQ-T1-GE3

        MOSFET 20V Vds 12V Vgs TSSOP-8
        SI6968BEDQ-T1-E3-CUT TAPE

        Mfr.#: SI6968BEDQ-T1-E3-CUT TAPE

        OMO.#: OMO-SI6968BEDQ-T1-E3-CUT-TAPE-1190

        New and Original
        SI6968BEDQ-T1-GE3-CUT TAPE

        Mfr.#: SI6968BEDQ-T1-GE3-CUT TAPE

        OMO.#: OMO-SI6968BEDQ-T1-GE3-CUT-TAPE-1190

        New and Original
        SI6968BEDQ

        Mfr.#: SI6968BEDQ

        OMO.#: OMO-SI6968BEDQ-1190

        New and Original
        SI6968BEDQ-T1

        Mfr.#: SI6968BEDQ-T1

        OMO.#: OMO-SI6968BEDQ-T1-1190

        MOSFET RECOMMENDED ALT 781-SI6968BEDQ-E3
        SI6968BEDQ-T1-E3.

        Mfr.#: SI6968BEDQ-T1-E3.

        OMO.#: OMO-SI6968BEDQ-T1-E3--1190

        Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po
        SI6968BEDQ-T1-T1-E3

        Mfr.#: SI6968BEDQ-T1-T1-E3

        OMO.#: OMO-SI6968BEDQ-T1-T1-E3-1190

        New and Original
        SI6968BEDQ-TI-E3

        Mfr.#: SI6968BEDQ-TI-E3

        OMO.#: OMO-SI6968BEDQ-TI-E3-1190

        New and Original
        SI6968BEDQT1GE3

        Mfr.#: SI6968BEDQT1GE3

        OMO.#: OMO-SI6968BEDQT1GE3-1190

        Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        SI6968BEQ-T1-E3

        Mfr.#: SI6968BEQ-T1-E3

        OMO.#: OMO-SI6968BEQ-T1-E3-1190

        New and Original
        Availability
        Stock:
        Available
        On Order:
        5500
        Enter Quantity:
        Current price of SI6968BEDQ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.31
        $0.31
        10
        $0.29
        $2.95
        100
        $0.28
        $27.94
        500
        $0.26
        $131.95
        1000
        $0.25
        $248.30
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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