SI6968BEDQ-T1-GE3

Mfr. #:: SI6968BEDQ-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 20V Vds 12V Vgs TSSOP-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI6968BEDQ-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI6968BEDQ-T1-GE3 Datasheet SI6968BEDQ-T1-GE3 Datasheet (P4-P6)SI6968BEDQ-T1-GE3 Datasheet (P7-P9)SI6968BEDQ-T1-GE3 Datasheet (P10-P11)
ECAD Model:
More Information:: SI6968BEDQ-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSSOP-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 6.5 A

Rds On - Drain-Source Resistance:: 22 mOhms

Vgs th - Gate-Source Threshold Voltage:: 600 mV

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 18 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.5 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.2 mm

Length:: 4.4 mm

Series:: SI6

Transistor Type:: 2 N-Channel

Width:: 3 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 30 S

Fall Time:: 510 ns

Product Type:: MOSFET

Rise Time:: 330 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 860 ns

Typical Turn-On Delay Time:: 245 ns

Part # Aliases:: SI6968BEDQ-GE3

Unit Weight:: 0.005573 oz

Tags: SI6968BEDQ-T1, SI6968BEDQ-T, SI6968BEDQ, SI6968BED, SI6968B, SI6968, SI696, SI69, SI6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6968BEDQ-T1-GE3 Description

***ied Electronics & Automation: SI6968BEDQ-T1-GE3 Dual N-channel MOSFET Transistor, 5.2 A, 20 V, 8-Pin TSSOP

***ure Electronics: Dual N-Channel 20 V 0.022 Ohms Surface Mount Power Mosfet - TSSOP-8

***et Europe: Transistor MOSFET Array Dual N-CH 20V 5.2A 8-Pin TSSOP T/R

SI6968BEDQ-T1-GE3 More Information

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI6968BEDQ-T1-GE3 DISTI # V72:2272_09215423	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	852	500:$0.3487 250:$0.4693 100:$0.4738 25:$0.6135 10:$0.6818 1:$0.7821
SI6968BEDQ-T1-GE3 DISTI # V36:1790_09215423	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	0
SI6968BEDQ-T1-GE3 DISTI # SI6968BEDQ-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9161In Stock	1000:$0.2692 500:$0.3366 100:$0.4258 10:$0.5550 1:$0.6300
SI6968BEDQ-T1-GE3 DISTI # SI6968BEDQ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9161In Stock	1000:$0.2692 500:$0.3366 100:$0.4258 10:$0.5550 1:$0.6300
SI6968BEDQ-T1-GE3 DISTI # SI6968BEDQ-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	15000:$0.2178 6000:$0.2206 3000:$0.2369
SI6968BEDQ-T1-GE3 DISTI # 28952739	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	852	500:$0.3487 250:$0.4693 100:$0.4738 27:$0.6135
SI6968BEDQ-T1-GE3 DISTI # SI6968BEDQ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6968BEDQ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2419 18000:$0.2479 12000:$0.2549 6000:$0.2659 3000:$0.2739
SI6968BEDQ-T1-GE3 DISTI # 33P5362	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1W RoHS Compliant: Yes	0	10000:$0.3810 6000:$0.3900 4000:$0.4050 2000:$0.4500 1000:$0.4950 1:$0.5160
SI6968BEDQ-T1-GE3 DISTI # 69W7218	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1W RoHS Compliant: Yes	0	1000:$0.5880 500:$0.6630 250:$0.7920 100:$0.8730 50:$0.9690 25:$1.0700 1:$1.1300
SI6968BEDQ-T1-GE3 DISTI # 70616997	Vishay Siliconix	SI6968BEDQ-T1-GE3 Dual N-channel MOSFETTransistor,5.2 A,20 V,8-Pin TSSOP RoHS: Compliant	0	300:$0.5100 600:$0.5000 1500:$0.4900 3000:$0.4800
SI6968BEDQ-T1-GE3 DISTI # 781-SI6968BEDQ-T1GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8 RoHS: Compliant	8010	1:$0.8400 10:$0.6760 100:$0.5130 500:$0.4240 1000:$0.3390 3000:$0.3070 6000:$0.2860 9000:$0.2760
SI6968BEDQT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3000
SI6968BEDQ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8 RoHS: Compliant	Americas -
SI6968BEDQ-T1-GE3 DISTI # XSFP00000063496	Vishay Siliconix	RoHS: Compliant	30000 in Stock0 on Order	30000:$0.4909 3000:$0.5400

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Availability

Stock:: Available
On Order:: 1990
Enter Quantity:

Current price of SI6968BEDQ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.84~~; ~~$0.84~~

10: ~~$0.68~~; ~~$6.76~~

100: ~~$0.51~~; ~~$51.30~~

500: ~~$0.42~~; ~~$212.00~~

1000: ~~$0.34~~; ~~$339.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI6968BEDQ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes