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SI6968BEDQ-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Vishay Siliconix
Si6968BEDQ
Document Number: 72274
S-81221-Rev. C, 02-Jun-08
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
FEATURES
• Halogen-free Option Available
• TrenchFET
®
Power MOSFETs
• ESD Protected: 3000 V
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
20
0.022 at V
GS
= 4.5 V
6.5
0.030 at V
GS
= 2.5 V
5.5
Si6968BEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Ordering Information: Si6968BEDQ-T1
D
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
S
2
S
2
G
2
TSSOP-8
T op V i e w
D
G
1
S
1
D
G
2
S
2
N-Channel N-Channel
* 300 Ω
* 300 Ω
* Typical value by design
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
6.5 5.2
A
T
A
= 70 °C
5.5 3.5
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.5 1.0
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.5 1.0
W
T
A
= 70 °C
0.96 0.64
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ. Max. Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
72 83
°C/W
Steady State 100 120
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
55 70
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 72274
S-81221-Rev. C, 02-Jun-08
Vishay Siliconix
Si6968BEDQ
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.6 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V
± 200 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
25
On-State Drain Current
b
I
D(on)
V
DS
≤ 5 V, V
GS
= 4.5 V
30 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 6.5 A
0.0165 0.022
Ω
V
GS
= 2.5 V, I
D
= 5.5 A
0.023 0.030
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 6.5 A
30 S
Diode Forward Voltage
b
V
SD
I
S
= 1.5 A, V
GS
= 0 V
0.71 1.2 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6.5 A
12 18
nCGate-Source Charge
Q
gs
2.2
Gate-Drain Charge
Q
gd
3.6
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
G
= 6 Ω
245 365
ns
Rise Time
t
r
330 495
Turn-Off Delay Time
t
d(off)
860 1300
Fall Time
t
f
510 765
Gate-Current vs. Gate-Source Voltage
0
2
4
6
8
10
0 3 6 9 12 15 18
- Gate Current (mA)I
GSS
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
0369 1 2 15
0.01
100
10000
T
J
= 25 °C
- Gate Current (A) I
GSS
0.1
1
10
1000
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
Document Number: 72274
S-81221-Rev. C, 02-Jun-08
www.vishay.com
3
Vishay Siliconix
Si6968BEDQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
012345
V
GS
= 5 thru 3 V
2 V
2.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
V
GS
= 4.5 V
V
GS
= 2.5 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
V
GS
= 4.5 V
I
D
= 6.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
Transfer Characteristics
Gate Charge
Source-Drain Diode Forward Voltage
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
0
1
2
3
4
5
0 3 6 9 12 15
V
DS
= 10 V
I
D
= 6.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.2 1.5
0.1
10
40
0 0.3 0.6 0.9
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A) I
S
1
P1-P3P4-P6P7-P9P10-P11

SI6968BEDQ-T1-GE3

Mfr. #:
Buy SI6968BEDQ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs TSSOP-8
Lifecycle:
New from this manufacturer.
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