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TK5Q65W,S1Q

TK5Q65W,S1Q
Mfr. #:
TK5Q65W,S1Q
Manufacturer:
Toshiba
Description:
MOSFET Power MOSFET N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
TK5Q65W,S1Q Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK5Q65W,S1Q DatasheetTK5Q65W,S1Q Datasheet (P4-P6)TK5Q65W,S1Q Datasheet (P7-P9)TK5Q65W,S1Q Datasheet (P10)
ECAD Model:
More Information:
TK5Q65W,S1Q more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
5.2 A
Rds On - Drain-Source Resistance:
1.02 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
10.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
60 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Packaging:
Tube
Height:
6.1 mm
Length:
6.65 mm
Series:
TK5Q65W
Width:
2.3 mm
Brand:
Toshiba
Fall Time:
5.5 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
48 ns
Typical Turn-On Delay Time:
39 ns
Unit Weight:
0.139332 oz
Tags
TK5Q65, TK5Q, TK5
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***k
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    RU

    Took repair vag kkl 409 which burned from the superpole. Everything turned out

    2019-03-16
    R***v
    R***v
    US

    What the doctor prescribed

    2019-04-01
***ow.cn
Trans MOSFET N-CH Si 650V 5.2A 3-Pin(3+Tab) IPAK Magazine
***
POWER MOSFET TRANSISTOR
***el Nordic
Contact for details
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Image Part # Description
TK5Q65W,S1Q

Mfr.#: TK5Q65W,S1Q

OMO.#: OMO-TK5Q65W-S1Q

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Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of TK5Q65W,S1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.16
$1.16
10
$0.92
$9.24
100
$0.71
$71.00
500
$0.63
$314.00
1000
$0.50
$495.00
2500
$0.44
$1 097.50
10000
$0.42
$4 230.00
25000
$0.41
$10 250.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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