IRF1010NSTRRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

84 A

Rds On - Drain-Source Resistance:

11 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

80 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

3.8 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

6.22 mm

Brand:

Infineon / IR

Fall Time:

48 ns

Product Type:

MOSFET

Rise Time:

76 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

39 ns

Typical Turn-On Delay Time:

13 ns

Part # Aliases:

SP001570042

Unit Weight:

0.139332 oz

Tags

IRF1010NST, IRF1010NS, IRF1010N, IRF1010, IRF101, IRF10, IRF1, IRF