PartNumber | IRF100P218XKMA1 | IRF100B201 | IRF100B202 |
Description | MOSFET TRENCH_MOSFETS | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | MOSFET N-CH 100V 97A TO-220AB |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247AC-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 462 A | 192 A | - |
Rds On Drain Source Resistance | 1.28 mOhms | 4.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 370 nC | 170 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 556 W | 441 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Infineon Technologies | Infineon / IR | - |
Forward Transconductance Min | 240 S | 278 S | - |
Fall Time | 120 ns | 100 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 110 ns | 97 ns | - |
Factory Pack Quantity | 400 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 170 ns | 110 ns | - |
Typical Turn On Delay Time | 50 ns | 17 ns | - |
Part # Aliases | IRF100P218 SP001619550 | SP001561498 | - |
Tradename | - | StrongIRFET | - |
Height | - | 15.65 mm | - |
Length | - | 10 mm | - |
Width | - | 4.4 mm | - |
Unit Weight | - | 0.211644 oz | - |