PartNumber | IRF1010NPBF | IRF1010NSTRL | IRF1010NSPBF |
Description | MOSFET MOSFT 55V 72A 11mOhm 80nC | MOSFET N-CH 55V 85A D2PAK | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | SMD/SMT |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 72 A | - | - |
Rds On Drain Source Resistance | 11 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 80 nC | - | - |
Pd Power Dissipation | 130 W | - | - |
Configuration | Single | - | Single |
Packaging | Tube | - | Tube |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001563032 | - | - |
Unit Weight | 0.211644 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 3.8 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 48 ns |
Rise Time | - | - | 76 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 84 A |
Vds Drain Source Breakdown Voltage | - | - | 55 V |
Vgs th Gate Source Threshold Voltage | - | - | 2 V to 4 V |
Rds On Drain Source Resistance | - | - | 11 mOhms |
Typical Turn Off Delay Time | - | - | 39 ns |
Typical Turn On Delay Time | - | - | 13 ns |
Qg Gate Charge | - | - | 80 nC |
Forward Transconductance Min | - | - | 32 S |
Channel Mode | - | - | Enhancement |