IRF1018ESLPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

79 A

Rds On - Drain-Source Resistance:

8.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

46 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

110 S

Fall Time:

46 ns

Product Type:

MOSFET

Rise Time:

35 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

13 ns

Part # Aliases:

SP001550908

Unit Weight:

0.073511 oz

Tags

IRF1018ES, IRF1018, IRF101, IRF10, IRF1, IRF