IRF1010ESPBF

Mfr. #:: IRF1010ESPBF
Manufacturer:: Infineon Technologies AG
Description:: MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK
Lifecycle:: New from this manufacturer.
Datasheet:: IRF1010ESPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Tags: IRF1010ES, IRF1010E, IRF1010, IRF101, IRF10, IRF1, IRF

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Vacuum Packaging with PL

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IRF1010ESPBF Description

***ical: Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

***ernational Rectifier: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***(Formerly Allied Electronics): MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

*** Electronics: In a Tube of 50, IRF1010NSPBF N-Channel MOSFET, 85 A, 55 V HEXFET, 3-Pin D2PAK Infineon

***ure Electronics: Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 85A D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 55V, 84A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis

***(Formerly Allied Electronics): IRF1010EZSPBF N-channel MOSFET Transistor; 84 A; 60 V; 3-Pin D2PAK

***ure Electronics: Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ow.cn: Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R

***roFlash: Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0068Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***icroelectronics: N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET

***Yang: Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 60 V 0.016 Ohm Surface Mount STripFET II Power MosFet - D2PAK

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:360mJ; Capacitance Ciss Typ:1810pF; Current Iar:30A; Current Id Max:60A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:16mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ical: Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 55V, 80A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; On State resistance @ Vgs = 10V: 8.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 320A; SMD Marking: 60N55F3; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

Part #	Mfg.	Description	Stock	Price
IRF1010ESPBF DISTI # 70018155	Infineon Technologies AG	MOSFET,60V,83A,12 MOHM,86.6 NC QG,D2-PAK RoHS: Compliant	0	500:$2.4500 1000:$2.4010 2500:$2.3280 5000:$2.2300 12500:$2.0830
IRF1010ESPBF DISTI # 942-IRF1010ESPBF	Infineon Technologies AG	MOSFET 60V SGL N-CH HEXFET Pwr MOSFET RoHS: Compliant	0
IRF1010ESPBF	International Rectifier		7400
IRF1010ESPBF	International Rectifier	RoHS: Compliant	18
IRF1010ESPBF DISTI # 8657319	Infineon Technologies AG	MOSFET, N, 60V, 84A, D2-PAK RoHS: Compliant	0	2500:$0.8090 1000:$0.8640 500:$0.8940 250:$0.9620 100:$1.0800 25:$1.2100 10:$1.5000 1:$1.8200

Image	Part #	Description
	Mfr.#: IRF1010EZPBF OMO.#: OMO-IRF1010EZPBF	MOSFET MOSFT 60V 84A 8.5mOhm 58nC
	Mfr.#: IRF1010EZSTRLP-CUT TAPE OMO.#: OMO-IRF1010EZSTRLP-CUT-TAPE-1190	New and Original
	Mfr.#: IRF1010ZSTRLPBF-CUT TAPE OMO.#: OMO-IRF1010ZSTRLPBF-CUT-TAPE-1190	New and Original
	Mfr.#: IRF1010EL OMO.#: OMO-IRF1010EL-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 84A TO-262
	Mfr.#: IRF1010BSTRLPBF OMO.#: OMO-IRF1010BSTRLPBF-1190	New and Original
	Mfr.#: IRF1010EPBF OMO.#: OMO-IRF1010EPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 84A TO-220AB
	Mfr.#: IRF1010EPBF,F1010E,IRF10 OMO.#: OMO-IRF1010EPBF-F1010E-IRF10-1190	New and Original
	Mfr.#: IRF1010ES OMO.#: OMO-IRF1010ES-1190	POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: IRF1010ZSPBF OMO.#: OMO-IRF1010ZSPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 75A D2PAK
	Mfr.#: IRF1010ESTRLPBF OMO.#: OMO-IRF1010ESTRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 84A D2PAK

IRF1010ESPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes