IRF1010ES

IRF1010ESTRLPBF vs IRF1010ES vs IRF1010ESPBF

 
PartNumberIRF1010ESTRLPBFIRF1010ESIRF1010ESPBF
DescriptionMOSFET MOSFT 60V 83A 12mOhm 86.6nCPOWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FETMOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current84 A--
Rds On Drain Source Resistance12 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge130 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation200 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min69 S--
Fall Time53 ns--
Product TypeMOSFET--
Rise Time78 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time48 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesSP001553824--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF1010ESTRLPBF MOSFET MOSFT 60V 83A 12mOhm 86.6nC
IRF1010ESTRLPBF-CUT TAPE New and Original
IRF1010ES POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
IRF1010ESPBF MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK
Infineon Technologies
Infineon Technologies
IRF1010ESTRR MOSFET N-CH 60V 84A D2PAK
IRF1010ESTRLPBF MOSFET N-CH 60V 84A D2PAK
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