PartNumber | IRF1010ESTRLPBF | IRF1010EPBF | IRF1010EL |
Description | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | MOSFET MOSFT 60V 81A 12mOhm 86.6nC | MOSFET N-CH 60V 84A TO-262 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-252-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 84 A | 81 A | - |
Rds On Drain Source Resistance | 12 mOhms | 12 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 130 nC | 86.6 nC | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 200 W | 170 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Tube | - |
Height | 2.3 mm | 15.65 mm | - |
Length | 6.5 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 4.4 mm | - |
Brand | Infineon / IR | Infineon Technologies | - |
Forward Transconductance Min | 69 S | - | - |
Fall Time | 53 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 78 ns | - | - |
Factory Pack Quantity | 800 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 48 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Part # Aliases | SP001553824 | SP001569818 | - |
Unit Weight | 0.139332 oz | 0.211644 oz | - |