IRF100B201

IRF100B201
Mfr. #:
IRF100B201
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRF100B201 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IRF100B201 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
192 A
Rds On - Drain-Source Resistance:
4.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
170 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
441 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
StrongIRFET
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Width:
4.4 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
278 S
Fall Time:
100 ns
Product Type:
MOSFET
Rise Time:
97 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
17 ns
Part # Aliases:
SP001561498
Unit Weight:
0.211644 oz
Tags
IRF100B, IRF100, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
***et
Trans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
IRF100x201 HEXFET™ Power MOSFETs
Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Part # Mfg. Description Stock Price
IRF100B201
DISTI # V99:2348_14701511
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 1:$2.0406
IRF100B201
DISTI # IRF100B201-ND
Infineon Technologies AGMOSFET N-CH 100V 192A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
4000In Stock
  • 1000:$1.3781
  • 500:$1.6632
  • 100:$2.1384
  • 10:$2.6610
  • 1:$2.9500
IRF100B201
DISTI # 30660878
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 7:$2.0406
IRF100B201
DISTI # 30155962
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1830
  • 650:$0.9501
  • 250:$0.9792
  • 50:$1.0752
IRF100B201
DISTI # IRF100B201
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB - Rail/Tube (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$1.0079
  • 5000:$0.9719
  • 8000:$0.9369
  • 15000:$0.9049
  • 30000:$0.8889
IRF100B201
DISTI # IRF100B201
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 1000
Asia - 0
  • 1000:$1.1340
  • 2000:$1.0874
  • 3000:$1.0727
  • 5000:$1.0309
  • 10000:$1.0177
  • 25000:$0.9922
  • 50000:$0.9680
IRF100B201
DISTI # SP001561498
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: SP001561498)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.2999
  • 10:€1.1809
  • 25:€1.0829
  • 50:€1.0399
  • 100:€0.9999
  • 500:€0.9619
  • 1000:€0.9279
IRF100B201
DISTI # 12AC9745
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:192A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3134
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201
DISTI # 942-IRF100B201
Infineon Technologies AGMOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
RoHS: Compliant
1779
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
450
  • 1000:$1.1300
  • 500:$1.1900
  • 100:$1.2400
  • 25:$1.2900
  • 1:$1.3900
IRF100B201
DISTI # 2709888
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant
3134
  • 1:$3.0100
  • 10:$2.8100
  • 100:$2.4900
  • 500:$2.3500
  • 1000:$2.2300
IRF100B201
DISTI # 2709888
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant
3412
  • 1:£2.6500
  • 10:£2.0900
  • 100:£1.6700
IRF100B201
DISTI # C1S322000590089
Infineon Technologies AGMOSFETs
RoHS: Compliant
1830
  • 1000:$1.3000
  • 500:$1.7000
  • 100:$1.8500
  • 25:$2.2500
  • 5:$2.7800
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OMO.#: OMO-DRV8353RHRGZT

Motor / Motion / Ignition Controllers & Drivers 100V 3-PHASE GATE DRIVE
ESD12VD9-TP

Mfr.#: ESD12VD9-TP

OMO.#: OMO-ESD12VD9-TP

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TPS54360DDAR

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OMO.#: OMO-TPS54360DDAR

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ESD12VD9-TP

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OMO.#: OMO-ESD12VD9-TP-1143

ESD Suppressors Uni-dir 10mA, 12V
DRV8353RHRGZT

Mfr.#: DRV8353RHRGZT

OMO.#: OMO-DRV8353RHRGZT-TEXAS-INSTRUMENTS

100-V Three-Phase Smart Gate Driver With Buck Regulator and Three Current Shunt Amplifiers
DRV8353RS-EVM

Mfr.#: DRV8353RS-EVM

OMO.#: OMO-DRV8353RS-EVM-TEXAS-INSTRUMENTS

95V BLDC MOTOR DRIVER EVM
REF3425QDBVRQ1

Mfr.#: REF3425QDBVRQ1

OMO.#: OMO-REF3425QDBVRQ1-TEXAS-INSTRUMENTS

REF3425 - 6 PPM/C IQ 95UA 2.5V FOR AUTO
TPS54360DDAR

Mfr.#: TPS54360DDAR

OMO.#: OMO-TPS54360DDAR-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators 60 Vin,3.5 A,SD DC-DC Converte
UCC28064ADR

Mfr.#: UCC28064ADR

OMO.#: OMO-UCC28064ADR-TEXAS-INSTRUMENTS

CONTROLLER WITH IMPROVED LIGHT L
UCC21520AQDWRQ1

Mfr.#: UCC21520AQDWRQ1

OMO.#: OMO-UCC21520AQDWRQ1-TEXAS-INSTRUMENTS

Isolated Dual-Channel Gate Driver for Automotive
Availability
Stock:
14
On Order:
1997
Enter Quantity:
Current price of IRF100B201 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.54
$2.54
10
$2.16
$21.60
100
$1.72
$172.00
500
$1.51
$755.00
1000
$1.25
$1 250.00
2000
$1.16
$2 320.00
5000
$1.12
$5 600.00
10000
$1.08
$10 800.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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