IRF100

IRF100P218XKMA1 vs IRF100B201 vs IRF100B202

 
PartNumberIRF100P218XKMA1IRF100B201IRF100B202
DescriptionMOSFET TRENCH_MOSFETSMOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC QgMOSFET N-CH 100V 97A TO-220AB
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current462 A192 A-
Rds On Drain Source Resistance1.28 mOhms4.2 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge370 nC170 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation556 W441 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Transistor Type1 N-Channel--
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min240 S278 S-
Fall Time120 ns100 ns-
Product TypeMOSFETMOSFET-
Rise Time110 ns97 ns-
Factory Pack Quantity4001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time170 ns110 ns-
Typical Turn On Delay Time50 ns17 ns-
Part # AliasesIRF100P218 SP001619550SP001561498-
Tradename-StrongIRFET-
Height-15.65 mm-
Length-10 mm-
Width-4.4 mm-
Unit Weight-0.211644 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF100P219XKMA1 MOSFET TRENCH_MOSFETS
IRF100P218XKMA1 MOSFET TRENCH_MOSFETS
IRF100B202 MOSFET N-CH 100V 97A TO-220AB
IRF100P218XKMA1 TRENCH_MOSFETS
IRF100P219XKMA1 TRENCH_MOSFETS
IRF100S201 MOSFET N-CH 100V 192A D2PAK
IRF100B201 MOSFET N-CH 100V 192A TO-220AB
Infineon / IR
Infineon / IR
IRF100B201 MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
IRF100S201 MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
IRF100S201-CUT TAPE New and Original
IRF100B201PBF New and Original
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