SI8489EDB-T2-E1

Name: Vishay - SI8489EDB-T2-E1
Brand: Vishay
SKU: OMO-2826759
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8489EDB-T2-E1
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
Lifecycle:: New from this manufacturer.
Datasheet:: SI8489EDB-T2-E1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI8489EDB-T2-E1 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Single

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Mounting-Style: SMD/SMT

Tradename: MICROFOOT TrenchFET

Package-Case: 4-UFBGA

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: 4-Microfoot

Configuration: Single

FET-Type: MOSFET P-Channel, Metal Oxide

Power-Max: 780mW

Transistor-Type: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Input-Capacitance-Ciss-Vds: 765pF @ 10V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 44 mOhm @ 1.5A, 10V

Vgs-th-Max-Id: 1.2V @ 250μA

Gate-Charge-Qg-Vgs: 27nC @ 10V

Pd-Power-Dissipation: 900 mW

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 25 ns

Rise-Time: 20 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: - 700 mA

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 0.5 V to - 1.2 V

Rds-On-Drain-Source-Resistance: 44 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 50 ns

Typical-Turn-On-Delay-Time: 27 ns

Qg-Gate-Charge: 9.5 nC

Forward-Transconductance-Min: 10 S

Tags: SI848, SI84, SI8

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8489EDB-T2-E1 Description

***ied Electronics & Automation: SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT

***et: Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R

***ronik: P-CH 20V 5,4A 36mOhm MICROFOOT

SI8489EDB-T2-E1 More Information

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Part #	Mfg.	Description	Stock	Price
SI8489EDB-T2-E1 DISTI # V72:2272_09216538	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	4770	3000:$0.1492 1000:$0.1535 500:$0.1906 250:$0.2240 100:$0.2266 25:$0.2848 10:$0.2883 1:$0.3521
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1TR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1749
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1CT-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1976 500:$0.2557 100:$0.3487 10:$0.4650 1:$0.5500
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1976 500:$0.2557 100:$0.3487 10:$0.4650 1:$0.5500
SI8489EDB-T2-E1 DISTI # 30195830	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	4770	3000:$0.1492 1000:$0.1535 500:$0.1906 250:$0.2240 100:$0.2266 49:$0.2848
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1489 6000:$0.1439 12000:$0.1389 18000:$0.1349 30000:$0.1309
SI8489EDB-T2-E1 DISTI # 70617010	Vishay Siliconix	SI8489EDB-T2-E1 P-channel MOSFET Transistor,4.3 A,20 V,4-Pin MICRO FOOT RoHS: Compliant	0	300:$0.2900 600:$0.2600 1500:$0.2300 3000:$0.2100
SI8489EDB-T2-E1 DISTI # 78-SI8489EDB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	12622	1:$0.4900 10:$0.3710 100:$0.2750 500:$0.2260 1000:$0.1750 3000:$0.1710
SI8489EDB-T2-E1 DISTI # 8181438P	Vishay Intertechnologies	TRANS MOSFET P-CH 20V 5.4A, RL	2940	60:£0.2550 200:£0.2440 400:£0.2220 800:£0.2010
SI8489EDB-T2-E1 DISTI # C1S803604064229	Vishay Intertechnologies	MOSFETs	4770	250:$0.2240 100:$0.2266 25:$0.2848 10:$0.2883
SI8489EDB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	Americas - 6000

SI8489EDB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes