SI2315BDS-T1-E3

SI2315BDS-T1-E3
Mfr. #:
SI2315BDS-T1-E3
Manufacturer:
Vishay
Description:
MOSFET P-CH 12V 3A SOT23-3
Lifecycle:
New from this manufacturer.
Datasheet:
SI2315BDS-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI2315BDS-T1-E3 more Information
Product Attribute
Attribute Value
Tags
SI2315BDS-T, SI2315B, SI2315, SI231, SI23, SI2
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
***ied Electronics & Automation
MOSFET; Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC
***ical
Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 12V 3A SOT23-3
***ark
For New Designs Use Si2333Cds-T1-Ge3 Rohs Compliant: No
***ronik
P-CHANNEL-FET 3,85A 12V SOT23 RoHSconf
***Components
MOSFET P-Channel 12V 3A TO236
***ser
P-Channel MOSFETs 1.8V 3.2A 1.25W
***eco
P-CHANNEL 1.25-W, 1.8-V (G-S) MOSFE<AZ
***rt123
SOT-23 (TO-236)
*** Electronics
RoHsTRANSISTOR MOSF
***
12V, 50 MOHMS@1.8V
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.85A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:770mW; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-3A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:3.0A; Current, Idm Pulse:12A; No. of Pins:3; Power Dissipation:0.75W; Power Output:0.75W; Power, Pd:0.75W; Power, Ptot:0.75W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:0.065ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.05ohm; Resistance, Rds on Max:0.05ohm; SMD Marking:M5; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:12V; Voltage, Vds Max:12V; Voltage, Vgs th Max:-0.9V; Voltage, Vgs th Min:-0.45V; Width, Tape:8mm
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2315BDS-T1-E3
DISTI # V72:2272_09216796
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
4686
  • 3000:$0.2302
  • 1000:$0.2370
  • 500:$0.2439
  • 250:$0.2507
  • 100:$0.2785
  • 25:$0.3685
  • 10:$0.4093
  • 1:$0.4808
SI2315BDS-T1-E3
DISTI # V36:1790_09216796
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000:$0.2318
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3CT-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
155684In Stock
  • 1000:$0.1695
  • 500:$0.2194
  • 100:$0.2792
  • 10:$0.3740
  • 1:$0.4400
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3DKR-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
155684In Stock
  • 1000:$0.1695
  • 500:$0.2194
  • 100:$0.2792
  • 10:$0.3740
  • 1:$0.4400
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
153000In Stock
  • 75000:$0.1226
  • 30000:$0.1239
  • 15000:$0.1307
  • 6000:$0.1404
  • 3000:$0.1501
SI2315BDS-T1-E3
DISTI # 32370918
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
45000
  • 3000:$0.1938
SI2315BDS-T1-E3
DISTI # 26962753
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
4686
  • 27:$0.4808
SI2315BDS-T1-E3
DISTI # 24135652
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
1105
  • 265:$0.2908
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2315BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 6000
  • 30000:$0.1354
  • 18000:$0.1391
  • 12000:$0.1431
  • 6000:$0.1492
  • 3000:$0.1537
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 6000
  • 30000:€0.1749
  • 18000:€0.1879
  • 12000:€0.2029
  • 6000:€0.2359
  • 3000:€0.3469
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI2315BDS-T1-E3
    DISTI # 06J7577
    Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 06J7577)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1000:$0.3400
    • 500:$0.4250
    • 250:$0.4700
    • 100:$0.5150
    • 50:$0.5980
    • 25:$0.6790
    • 1:$0.8500
    SI2315BDS-T1-E3
    DISTI # 06J7577
    Vishay IntertechnologiesP CHANNEL MOSFET, -12V, -3A, TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV RoHS Compliant: Yes1105
    • 1:$0.1890
    • 25:$0.1890
    • 50:$0.1890
    • 100:$0.1890
    • 250:$0.1890
    • 500:$0.1890
    • 1000:$0.1890
    SI2315BDS-T1-E3.
    DISTI # 28AC2126
    Vishay IntertechnologiesFOR NEW DESIGNS USE SI2333CDS-T1-GE3 ROHS COMPLIANT: NO6000
    • 30000:$0.1400
    • 18000:$0.1440
    • 12000:$0.1480
    • 6000:$0.1540
    • 1:$0.1590
    SI2315BDS-T1-E3
    DISTI # 70026068
    Vishay SiliconixMOSFET,Power,P-Channel,-12 V,8 V,3.5 A,1.25 W,-55 to 150 degC
    RoHS: Compliant
    0
    • 3000:$0.3930
    • 6000:$0.3590
    • 12000:$0.3480
    SI2315BDS-T1-E3
    DISTI # 781-SI2315BDS-E3
    Vishay IntertechnologiesMOSFET 1.8V 3.2A 1.25W
    RoHS: Compliant
    9252
    • 1:$0.6700
    • 10:$0.5420
    • 100:$0.4110
    • 500:$0.3400
    • 1000:$0.2720
    • 3000:$0.2460
    • 6000:$0.2290
    • 9000:$0.2210
    SI2315BDS-T1
    DISTI # 781-SI2315BDS
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2333CDS-T1-GE3
    RoHS: Not compliant
    0
      SI2315BDS-T1-E3Vishay Intertechnologies 
      RoHS: Compliant
      2460Cut Tape/Mini-Reel
      • 1:$0.2700
      • 100:$0.1960
      • 250:$0.1840
      • 500:$0.1750
      • 1500:$0.1620
      SI2315BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
      RoHS: Compliant
      66000Reel
      • 3000:$0.1460
      • 6000:$0.1380
      SI2315BDS-T1-E3Vishay Intertechnologies 2713
        SI2315BDS-T1-E3Vishay Siliconix 620
        • 9:$0.5625
        • 37:$0.3656
        • 138:$0.2109
        • 476:$0.1800
        SI2315BDS-T1-E3Vishay Siliconix 1438
          SI2315BDS-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB496
          • 161:$0.2250
          • 34:$0.3750
          • 1:$0.7500
          SI2315BDS-T1-E3Vishay IntertechnologiesSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB2184
          • 506:$0.3168
          • 127:$0.3960
          • 1:$0.7920
          SI2315BDS-T1-E3
          DISTI # SI2315BDS-T1-E3
          Vishay IntertechnologiesTransistor: P-MOSFET,unipolar,-12V,-3A,1.19W,SOT232261
          • 3000:$0.1916
          • 500:$0.2209
          • 100:$0.2548
          • 25:$0.2818
          • 3:$0.2987
          SI2315BDST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
          RoHS: Compliant
          18000
            SI2315BDS-T1-E3Vishay IntertechnologiesMOSFET 1.8V 3.2A 1.25W
            RoHS: Compliant
            Americas -
            • 3000:$0.2320
            • 6000:$0.2200
            • 12000:$0.2130
            • 18000:$0.2080
            SI2315BDS-T1-E3
            DISTI # 1470105
            Vishay IntertechnologiesMOSFET, P, -12V, -3.85A, SOT-23
            RoHS: Compliant
            1105
            • 500:£0.1890
            • 250:£0.2010
            • 100:£0.2210
            • 25:£0.3220
            • 1:£0.3480
            SI2315BDS-T1-E3
            DISTI # 1470105
            Vishay IntertechnologiesMOSFET, P, -12V, -3.85A, SOT-23
            RoHS: Compliant
            1105
            • 500:$0.3310
            • 100:$0.4210
            • 10:$0.5640
            • 1:$0.6600
            SI2315BDS-T1-E3
            DISTI # 1470105RL
            Vishay IntertechnologiesMOSFET, P, -12V, -3.85A, SOT-23
            RoHS: Compliant
            0
            • 500:$0.3310
            • 100:$0.4210
            • 10:$0.5640
            • 1:$0.6600
            SI2315BDS-T1-E3
            DISTI # XSKDRABV0043834
            Vishay IntertechnologiesSO-16
            RoHS: Compliant
            2400 in Stock0 on Order
            • 2400:$0.2557
            SI2315BDS-T1-E3
            DISTI # XSFP00000106261
            Vishay SiliconixGeneral Purpose Inductor, 47uH, 10%,1Element,Ferrite-Core, SMD, 1206
            RoHS: Compliant
            55329 in Stock0 on Order
            • 55329:$0.1947
            • 3000:$0.2086
            Image Part # Description
            SI2315BDS-T1-E3

            Mfr.#: SI2315BDS-T1-E3

            OMO.#: OMO-SI2315BDS-T1-E3

            MOSFET 1.8V 3.2A 1.25W
            SI2315BDS-T1-GE3

            Mfr.#: SI2315BDS-T1-GE3

            OMO.#: OMO-SI2315BDS-T1-GE3

            MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
            SI2315BDS-T1-E3

            Mfr.#: SI2315BDS-T1-E3

            OMO.#: OMO-SI2315BDS-T1-E3-VISHAY

            MOSFET P-CH 12V 3A SOT23-3
            SI2315BDS-T1-GE3

            Mfr.#: SI2315BDS-T1-GE3

            OMO.#: OMO-SI2315BDS-T1-GE3-VISHAY

            MOSFET P-CH 12V 3A SOT23-3
            SI2315BDST1

            Mfr.#: SI2315BDST1

            OMO.#: OMO-SI2315BDST1-1190

            Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
            SI2315BDS-T1-E3-CUT TAPE

            Mfr.#: SI2315BDS-T1-E3-CUT TAPE

            OMO.#: OMO-SI2315BDS-T1-E3-CUT-TAPE-1190

            New and Original
            Availability
            Stock:
            Available
            On Order:
            4000
            Enter Quantity:
            Current price of SI2315BDS-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $0.12
            $0.12
            10
            $0.11
            $1.09
            100
            $0.10
            $10.36
            500
            $0.10
            $48.95
            1000
            $0.09
            $92.10
            Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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