MTW32N20EG

MTW32N20EG
Mfr. #:
MTW32N20EG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET T0247 200V 32A 75mOhm
Lifecycle:
New from this manufacturer.
Datasheet:
MTW32N20EG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MTW32N20EG DatasheetMTW32N20EG Datasheet (P4-P6)MTW32N20EG Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
32 A
Rds On - Drain-Source Resistance:
75 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
180 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
20.3 mm
Length:
15.9 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
5.3 mm
Brand:
ON Semiconductor
Forward Transconductance - Min:
12 S
Fall Time:
91 ns
Product Type:
MOSFET
Rise Time:
120 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
75 ns
Typical Turn-On Delay Time:
25 ns
Unit Weight:
1.340411 oz
Tags
MTW32N20, MTW32N2, MTW32, MTW3, MTW
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247
***et Europe
Trans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-247 Rail
***ser
MOSFETs- Power and Small Signal 200V 32A N-Channel
***nell
N CHANNEL MOSFET, 200V, 32A, TO-247
***i-Key
MOSFET N-CH 200V 32A TO247
***ark
N Channel Mosfet, 200V, 32A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.075Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
***th Star Micro
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage high speed switching applications in power supplies converters and PWM motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Part # Mfg. Description Stock Price
MTW32N20EG
DISTI # MTW32N20EGOS-ND
ON SemiconductorMOSFET N-CH 200V 32A TO247
RoHS: Compliant
Min Qty: 90
Container: Tube
Limited Supply - Call
    MTW32N20EG
    DISTI # 26K4667
    ON SemiconductorN CHANNEL MOSFET, 200V, 32A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
      MTW32N20E
      DISTI # 863-MTW32N20E
      ON SemiconductorMOSFET 200V 32A N-Channel
      RoHS: Not compliant
      0
        MTW32N20EG
        DISTI # 863-MTW32N20EG
        ON SemiconductorMOSFET NFET T0247 200V 32A 75mOhm
        RoHS: Compliant
        0
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          OMO.#: OMO-MTW32N20EG

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          OMO.#: OMO-MTW32N20EG-ON-SEMICONDUCTOR

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          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of MTW32N20EG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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