SI2301BDS-T1-GE3

SI2301BDS-T1-GE3
Mfr. #:
SI2301BDS-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 2.2A SOT23-3
Lifecycle:
New from this manufacturer.
Datasheet:
SI2301BDS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI2301BDS-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Packaging
Reel
Part-Aliases
SI2301BDS-GE3
Unit-Weight
0.050717 oz
Mounting-Style
SMD/SMT
Package-Case
SOT-23-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 P-Channel
Pd-Power-Dissipation
700 mW
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
40 ns
Rise-Time
40 ns
Vgs-Gate-Source-Voltage
8 V
Id-Continuous-Drain-Current
2.2 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Resistance
100 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
30 ns
Typical-Turn-On-Delay-Time
20 ns
Channel-Mode
Enhancement
Tags
SI2301BDS-T1, SI2301BDS-T, SI2301BD, SI2301B, SI2301, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 20V 2.2A SOT23-3
***ure Electronics
P-CHANNEL 2.5-V (G-S) MOSFET
***nell
P CHANNEL MOSFET
***ark
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW ;RoHS Compliant: Yes
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2301BDS-T1-GE3
DISTI # V72:2272_09216783
Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant
2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
  • 1:$0.4180
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$0.1875
SI2301BDS-T1-GE3
DISTI # 28976274
Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant
2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 57:$0.2847
SI2301BDS-T1-GE3
DISTI # 84R8020
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Power Dissipation Pd:700mW, RoHS Compliant: Yes0
  • 1:$0.4400
  • 25:$0.3330
  • 50:$0.2910
  • 100:$0.2480
  • 250:$0.2260
  • 500:$0.2030
  • 1000:$0.1570
SI2301BDS-T1-GE3
DISTI # 33P5162
Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Product Range:-, RoHS Compliant: Yes0
  • 1:$0.1630
  • 3000:$0.1620
  • 6000:$0.1540
  • 12000:$0.1370
SI2301BDS-T1-GE3
DISTI # 781-SI2301BDS-GE3
Vishay IntertechnologiesMOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
RoHS: Compliant
10356
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.2480
  • 500:$0.2030
  • 1000:$0.1570
  • 3000:$0.1430
  • 6000:$0.1340
  • 9000:$0.1250
SI2301BDS-T1-GE3
DISTI # 1867173
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 3000:£0.1390
SI2301BDS-T1-GE3
DISTI # C1S803601819123
Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant
2495
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
Image Part # Description
SI2301BDS-T1-E3

Mfr.#: SI2301BDS-T1-E3

OMO.#: OMO-SI2301BDS-T1-E3

MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
SI2301BDS

Mfr.#: SI2301BDS

OMO.#: OMO-SI2301BDS-1190

P CHANNEL MOSFET, FULL REEL
SI2301BDS-T-E3

Mfr.#: SI2301BDS-T-E3

OMO.#: OMO-SI2301BDS-T-E3-1190

New and Original
SI2301BDS-T1-E3 , MAX630

Mfr.#: SI2301BDS-T1-E3 , MAX630

OMO.#: OMO-SI2301BDS-T1-E3-MAX630-1190

New and Original
SI2301BDS-T1-ES

Mfr.#: SI2301BDS-T1-ES

OMO.#: OMO-SI2301BDS-T1-ES-1190

New and Original
SI2301BDS-T1-GE3 , MAX63

Mfr.#: SI2301BDS-T1-GE3 , MAX63

OMO.#: OMO-SI2301BDS-T1-GE3-MAX63-1190

New and Original
SI2301BDS-TI

Mfr.#: SI2301BDS-TI

OMO.#: OMO-SI2301BDS-TI-1190

New and Original
SI2301BDS-TI-E3

Mfr.#: SI2301BDS-TI-E3

OMO.#: OMO-SI2301BDS-TI-E3-1190

New and Original
SI2301BDS-T1-E3-CUT TAPE

Mfr.#: SI2301BDS-T1-E3-CUT TAPE

OMO.#: OMO-SI2301BDS-T1-E3-CUT-TAPE-1190

New and Original
SI2301BDS-T1-GE3

Mfr.#: SI2301BDS-T1-GE3

OMO.#: OMO-SI2301BDS-T1-GE3-VISHAY

MOSFET P-CH 20V 2.2A SOT23-3
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of SI2301BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.14
$0.14
10
$0.13
$1.31
100
$0.12
$12.41
500
$0.12
$58.60
1000
$0.11
$110.30
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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