BC850BE6327HTSA1

Mfr. #:: BC850BE6327HTSA1
Manufacturer:: Infineon Technologies
Description:: Bipolar Transistors - BJT NPN SilicnAF TRNSTRS
Lifecycle:: New from this manufacturer.
Datasheet:: BC850BE6327HTSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Transistor Polarity:: NPN

Configuration:: Dual

Collector- Emitter Voltage VCEO Max:: 45 V

Collector- Base Voltage VCBO:: 50 V

Emitter- Base Voltage VEBO:: 6 V

Collector-Emitter Saturation Voltage:: 200 mV

Maximum DC Collector Current:: 200 mA

Gain Bandwidth Product fT:: 250 MHz

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Series:: BC850

DC Current Gain hFE Max:: 450

Packaging:: Reel

Brand:: Infineon Technologies

Continuous Collector Current:: 100 mA

DC Collector/Base Gain hfe Min:: 200

Pd - Power Dissipation:: 330 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 850B BC BC85BE6327XT E6327 SP000010572

Unit Weight:: 0.000282 oz

Tags: BC850BE, BC850B, BC850, BC85, BC8

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BC850BE6327HTSA1 Description

***ure Electronics: BC850 Series NPN 45 V 100 mA Silicon AF Transistor Array - SOT-23-3

***ical: Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

***ineon: NPN Silicon AF Transistors | Summary of Features: For AF input stages and driver applications; High current gain; Low collector-emitter saturation voltage; Low noise between 30 Hz and 15 kHz; Complementary types:; BC856...-BC860...(PNP); Pb-free (RoHS compliant) package1); Qualified according AEC Q101 | Target Applications: For AF input stages and driver applications

Market price

Part #	Mfg.	Description	Stock	Price
BC850BE6327HTSA1 DISTI # BC850BE6327HTSA1TR-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 48000 Container: Tape & Reel (TR)	Limited Supply - Call	48000:$0.0240
BC850BE6327HTSA1 DISTI # BC850BE6327HTSA1CT-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BC850BE6327HTSA1 DISTI # BC850BE6327HTSA1DKR-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BC 850BF E6327 DISTI # BC850BFE6327-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-23 RoHS: Compliant Min Qty: 30000 Container: Tape & Reel (TR)	Limited Supply - Call
BC850BWE6327HTSA1 DISTI # BC850BWE6327HTSA1TR-ND	Infineon Technologies AG	TRANS NPN 45V 0.1A SOT-323 RoHS: Compliant Min Qty: 42000 Container: Tape & Reel (TR)	Limited Supply - Call
BC 850B E6327 DISTI # 726-BC850BE6327	Infineon Technologies AG	Bipolar Transistors - BJT NPN SilicnAF TRNSTRS RoHS: Compliant	2935	1:$0.1800 10:$0.1680 100:$0.0590 1000:$0.0400 3000:$0.0300 9000:$0.0260 24000:$0.0240 45000:$0.0210
BC850BE6327HTSA1 DISTI # 726-BC850BE6327HTSA1	Infineon Technologies AG	Bipolar Transistors - BJT NPN SilicnAF TRNSTRS RoHS: Compliant	0
BC 850BW E6327 DISTI # 726-BC850BWE6327	Infineon Technologies AG	Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR RoHS: Compliant	0
BC 850B E6327	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Not Compliant	36000	100:$0.0100 500:$0.0100 1000:$0.0100 1:$0.0200 25:$0.0200
BC850BE6327HTSA1	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant	165000	100:$0.0100 500:$0.0100 1000:$0.0100 1:$0.0200 25:$0.0200
BC850BE6327	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant	29665	1:$0.0300 25:$0.0300 100:$0.0300 500:$0.0300 1000:$0.0300
BC850B E6327	Infineon Technologies AG		12000
BC850BE6327 DISTI # BC850BE6327	Infineon Technologies AG	Transistor: NPN,bipolar,45V,100mA,330mW,SOT23	6724	25:$0.0287 100:$0.0247 250:$0.0198 1000:$0.0172 3000:$0.0161
BC850BE6327 DISTI # XSKDRABV0017537	Infineon Technologies AG	RoHS: Compliant	234000 in Stock0 on Order	234000:$0.0272 30000:$0.0292

Image	Part #	Description
	Mfr.#: BC850BE6327HTSA1 OMO.#: OMO-BC850BE6327HTSA1	Bipolar Transistors - BJT NPN SilicnAF TRNSTRS
	Mfr.#: BC850BE6327HTSA1 OMO.#: OMO-BC850BE6327HTSA1-INFINEON-TECHNOLOGIES	TRANS NPN 45V 0.1A SOT-23
	Mfr.#: BC850BE6327 OMO.#: OMO-BC850BE6327-1190	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
	Mfr.#: BC850BE6327 (PB) OMO.#: OMO-BC850BE6327-PB--1190	New and Original

BC850BE6327HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes