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SIHF12N50C-E3

SIHF12N50C-E3
Mfr. #:
SIHF12N50C-E3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET N-Channel 500V
Lifecycle:
New from this manufacturer.
Datasheet:
SIHF12N50C-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHF12N50C-E3 more Information
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Series
E
Packaging
Reel
Unit-Weight
0.211644 oz
Mounting-Style
Through Hole
Package-Case
TO-220-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
36 W
Maximum-Operating-Temperature
+ 125 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
12 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Resistance
460 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
32 nC
Forward-Transconductance-Min
3 S
Tags
SIHF12N, SIHF12, SIHF1, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
Part # Mfg. Description Stock Price
SIHF12N50C-E3
DISTI # SIHF12N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 12A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.9106
SIHF12N50C-E3
DISTI # SIHF12N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHF12N50C-E3
DISTI # 781-SIHF12N50C-E3		Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		0
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2500:$2.5200
SIHF12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		Americas -
    Image Part # Description
    SIHF12N50C-E3

    Mfr.#: SIHF12N50C-E3

    OMO.#: OMO-SIHF12N50C-E3

    		 MOSFET N-Channel 500V
    SIHF12N65E-GE3

    Mfr.#: SIHF12N65E-GE3

    OMO.#: OMO-SIHF12N65E-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N60E-E3

    Mfr.#: SIHF12N60E-E3

    OMO.#: OMO-SIHF12N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N60E-GE3

    Mfr.#: SIHF12N60E-GE3

    OMO.#: OMO-SIHF12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N50C-E3

    Mfr.#: SIHF12N50C-E3

    OMO.#: OMO-SIHF12N50C-E3-VISHAY

    		 RF Bipolar Transistors MOSFET N-Channel 500V
    SIHF122N50C-E3

    Mfr.#: SIHF122N50C-E3

    OMO.#: OMO-SIHF122N50C-E3-1190

    		 New and Original
    SIHF12N60E

    Mfr.#: SIHF12N60E

    OMO.#: OMO-SIHF12N60E-1190

    		 New and Original
    SIHF12N60E-E3

    Mfr.#: SIHF12N60E-E3

    OMO.#: OMO-SIHF12N60E-E3-VISHAY

    		 MOSFET N-CH 600V 12A TO220 FULLP
    SIHF12N60EGE3

    Mfr.#: SIHF12N60EGE3

    OMO.#: OMO-SIHF12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    SIHF12N65E

    Mfr.#: SIHF12N65E

    OMO.#: OMO-SIHF12N65E-1190

    		 New and Original
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of SIHF12N50C-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.58
    $3.58
    10
    $3.41
    $34.06
    100
    $3.23
    $322.65
    500
    $3.05
    $1 523.65
    1000
    $2.87
    $2 868.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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