A2V07H525-04NR6

Mfr. #:: A2V07H525-04NR6
Manufacturer:: NXP Semiconductors
Description:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
Lifecycle:: New from this manufacturer.
Datasheet:: A2V07H525-04NR6 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: A2V07H525-04NR6 more Information A2V07H525-04NR6 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: Dual N-Channel

Technology:: Si

Id - Continuous Drain Current:: 2.8 A

Vds - Drain-Source Breakdown Voltage:: - 500 mV, 105 V

Gain:: 17.5 dB

Output Power:: 120 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: OM-1230-4L

Packaging:: Reel

Operating Frequency:: 595 MHz to 851 MHz

Type:: RF Power MOSFET

Brand:: NXP Semiconductors

Number of Channels:: 2 Channel

Moisture Sensitive:: Yes

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 150

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage:: 1.3 V

Part # Aliases:: 935339924528

Unit Weight:: 0.186557 oz

Tags: A2V0, A2V

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2V07H525-04NR6 Description

***escale Semiconductor: Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V

***ark: Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V / Reel 13" Q2/T3 in Drypack RoHS Compliant: Yes

***W: RF Power Transistor, 0.595 to 0.851 GHz, 602 W P3dB, Typ Gain in dB is 17.5 @ 623 MHz, 48 V, SOT1816-1, LDMOS

***i-Key: AIRFAST RF LDMOS WIDEBAND INTEGR

Market price

Part #	Mfg.	Description	Stock	Price
A2V07H525-04NR6 DISTI # A2V07H525-04NR6-ND	NXP Semiconductors	AIRFAST RF LDMOS WIDEBAND INTEGR RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$136.6405
A2V07H525-04NR6 DISTI # A2V07H525-04NR6	Avnet, Inc.	Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V - Tape and Reel (Alt: A2V07H525-04NR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	1500:$130.6900 900:$133.1900 600:$138.1900 300:$143.7900 150:$149.6900
A2V07H525-04NR6 DISTI # 17AC3550	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTOR, 595-851 MHZ, 120 W AVG., 48 V TR	0	25:$128.4300 10:$136.6400 5:$138.7000 1:$140.7500
A2V07H525-04NR6 DISTI # 771-A2V07H525-04NR6	NXP Semiconductors	RF MOSFET Transistors A2V07H525-04N/FM4F///REEL 13 Q2 DP RoHS: Compliant	0	150:$127.1100
A2V07H525-04NR6 DISTI # A2V07H525-04NR6	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	0	150:$136.0900

A2V07H525-04NR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes