2SC5659T2LN

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

25 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

0.05 A

Gain Bandwidth Product fT:

300 MHz

Maximum Operating Temperature:

+ 150 C

Series:

2SC5659

DC Current Gain hFE Max:

56 at 1 mA, 6 V

Height:

0.5 mm

Length:

1.2 mm

Packaging:

Reel

Width:

0.8 mm

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

56

Pd - Power Dissipation:

150 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

8000

Subcategory:

Transistors

Tags

2SC5659, 2SC565, 2SC56, 2SC5, 2SC