TGF2965-SM

TGF2965-SM
Mfr. #:
TGF2965-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2965-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
TGF2965-SM more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tray
Part-Aliases
1123170
Unit-Weight
0.002014 oz
Mounting-Style
SMD/SMT
Package-Case
QFN-16
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
18 dB
Output-Power
6 W
Pd-Power-Dissipation
7.5 W
Maximum-Operating-Temperature
-
Minimum-Operating-Temperature
-
Operating-Frequency
30 MHz to 3 GHz
Id-Continuous-Drain-Current
600 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Vgs-th-Gate-Source-Threshold-Voltage
-
Rds-On-Drain-Source-Resistance
-
Transistor-Polarity
P-Channel
Forward-Transconductance-Min
-
Vgs-Gate-Source-Breakdown-Voltage
- 2.7 V
Gate-Source-Cutoff-Voltage
-
Maximum-Drain-Gate-Voltage
-
Tags
TGF296, TGF29, TGF2, TGF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN
TGF2965-SM GaN RF Input-Matched Transistor
QorvoTGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2965-SM
DISTI # 772-TGF2965-SM
QorvoRF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
RoHS: Compliant
0
  • 1:$45.0000
  • 25:$40.0000
  • 100:$35.0000
  • 250:$32.0000
TGF2965-SM-EVB
DISTI # 772-TGF2965-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
Image Part # Description
TGF2965-SM

Mfr.#: TGF2965-SM

OMO.#: OMO-TGF2965-SM

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
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TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

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Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM-318

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TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954-318

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2977-SM-EVB

Mfr.#: TGF2977-SM-EVB

OMO.#: OMO-TGF2977-SM-EVB-1152

RF Development Tools
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
TGF2929-HM-EVB

Mfr.#: TGF2929-HM-EVB

OMO.#: OMO-TGF2929-HM-EVB-1152

RF Development Tools
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of TGF2965-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$48.00
$48.00
10
$45.60
$456.00
100
$43.20
$4 320.00
500
$40.80
$20 400.00
1000
$38.40
$38 400.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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