MMRF2007GNR1

MMRF2007GNR1
Mfr. #:
MMRF2007GNR1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Datasheet:
MMRF2007GNR1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
Dual N-Channel
Technology:
Si
Id - Continuous Drain Current:
40 uA, 320 uA
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 70 V
Gain:
32.6 dB
Output Power:
35 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
TO-270-WBLG-16
Packaging:
Reel
Operating Frequency:
136 MHz to 940 MHz
Series:
MMRF2007
Type:
RF Power MOSFET
Brand:
NXP / Freescale
Number of Channels:
2 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 0.5 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
2 V, 2 V
Part # Aliases:
935312376528
Unit Weight:
0.085451 oz
Tags
MMRF200, MMRF2, MMRF, MMR
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
***W
Amplifier,136 to 940 MHz, 79 W, Typ Gain in dB is 32.6 @ 940 MHz, 28 V, LDMOS,
***i-Key
RF LDMOS WIDEBAND INTEGRATED POW
***et
Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R
Part # Mfg. Description Stock Price
MMRF2007GNR1
DISTI # V36:1790_17079110
NXP SemiconductorsRF & MW POWER AMPLIFIER0
  • 500000:$61.9000
  • 250000:$61.9100
  • 50000:$63.5100
  • 5000:$67.2400
  • 500:$67.9200
MMRF2007GNR1
DISTI # MMRF2007GNR1-ND
NXP SemiconductorsRF LDMOS WIDEBAND INTEGRATED POW
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$67.9247
MMRF2007GNR1
DISTI # MMRF2007GNR1
Avnet, Inc.Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R - Tape and Reel (Alt: MMRF2007GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$64.8900
  • 3000:$66.1900
  • 2000:$68.6900
  • 1000:$71.4900
  • 500:$74.3900
MMRF2007GNR1
DISTI # 841-MMRF2007GNR1
NXP SemiconductorsRF MOSFET Transistors MMRF2007GN/FM16///REEL 13 Q2 DP0
    MMRF2007GNR1
    DISTI # MMRF2007GNR1
    NXP SemiconductorsRF & MW POWER AMPLIFIER
    RoHS: Compliant
    0
    • 500:$76.6000
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    MMRF2005NR1

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    OMO.#: OMO-MMRF2005NR1

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    MMRF2007GNR1

    Mfr.#: MMRF2007GNR1

    OMO.#: OMO-MMRF2007GNR1

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    SINGLE W-CDMA RF LDMOS WIDEBAND
    MMRF2007GNR1

    Mfr.#: MMRF2007GNR1

    OMO.#: OMO-MMRF2007GNR1-NXP-SEMICONDUCTORS

    RF LDMOS WIDEBAND INTEGRATED POW
    MMRF2006NT1

    Mfr.#: MMRF2006NT1

    OMO.#: OMO-MMRF2006NT1-NXP-SEMICONDUCTORS

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    MMRF2004NBR1

    Mfr.#: MMRF2004NBR1

    OMO.#: OMO-MMRF2004NBR1-NXP-SEMICONDUCTORS

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    MMRF2007NR1

    Mfr.#: MMRF2007NR1

    OMO.#: OMO-MMRF2007NR1-NXP-SEMICONDUCTORS

    RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of MMRF2007GNR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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